The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories

2019 ◽  
Vol 58 (8) ◽  
pp. 081002
Author(s):  
Yung-Yueh Chiu ◽  
Cheng-Han Lin ◽  
Jhih-Siang Yang ◽  
Bo-Jun Yang ◽  
Minoru Aoki ◽  
...  
2009 ◽  
Vol 30 (9) ◽  
pp. 984-986 ◽  
Author(s):  
C.M. Compagnoni ◽  
M. Ghidotti ◽  
A.L. Lacaita ◽  
A.S. Spinelli ◽  
A. Visconti

Sign in / Sign up

Export Citation Format

Share Document