Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells

2017 ◽  
Vol 10 (12) ◽  
pp. 121001 ◽  
Author(s):  
Ken Kataoka ◽  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Three Dimensional ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L921-L924 ◽  
Author(s):  
Jian Ping Zhang ◽  
Vinod Adivarahan ◽  
Hong Mei Wang ◽  
Qhalid Fareed ◽  
Edmundas Kuokstis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

High power ultraviolet light emitting diodes based on GaN∕AlGaN quantum wells produced by molecular beam epitaxy

2006 ◽  
Vol 100 (10) ◽  
pp. 104506 ◽  
Author(s):  
J. S. Cabalu ◽  
A. Bhattacharyya ◽  
C. Thomidis ◽  
I. Friel ◽  
T. D. Moustakas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
High Power ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells

2006 ◽  
Vol 955 ◽  
Author(s):  
Ramya Chandrasekaran ◽  
Anirban Bhattacharyya ◽  
Ryan France ◽  
Christos Thomidis ◽  
Adrian Williams ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Current Voltage ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes ◽  
Electro Luminescence

ABSTRACTIn this paper, we report the growth and fabrication of non-polar A-plane AlGaN multiple quantum well based ultraviolet light emitting diodes (UV-LEDs). The LEDs were grown on R-plane sapphire substrates using molecular beam epitaxy (MBE). The Current-voltage characteristics of the fabricated devices demonstrated rectifying behavior with a series resistance of 38 ohms. An electro-luminescence emission at 338 nm was obtained.

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