Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers

2014 ◽  
Vol 7 (3) ◽  
pp. 031003 ◽  
Author(s):  
Ingrid L. Koslow ◽  
Claire McTaggart ◽  
Feng Wu ◽  
Shuji Nakamura ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Buffer Layers ◽  
Light Emitting ◽  
Long Wavelength ◽  
Improved Performance ◽  
Wavelength Light

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

2012 ◽  
Vol 101 (12) ◽  
pp. 121106 ◽  
Author(s):  
Ingrid L. Koslow ◽  
Matthew T. Hardy ◽  
Po Shan Hsu ◽  
Po-Yuan Dang ◽  
Feng Wu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Buffer Layers ◽  
Light Emitting ◽  
Polarization Effects ◽  
Long Wavelength ◽  
Wavelength Light

scholarly journals Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Biaxial Stress ◽  
Organic Chemical ◽  
Graphene Surface ◽  
Light Emitting ◽  
Long Wavelength ◽  
Pre Treatment ◽  
Wavelength Light

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

2000 ◽  
Vol 34 (12) ◽  
pp. 1402-1405 ◽  
Author(s):  
N. V. Zotova ◽  
S. S. Kizhaev ◽  
S. S. Molchanov ◽  
T. B. Popova ◽  
Yu. P. Yakovlev
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Long Wavelength ◽  
Wavelength Light

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

2012 ◽  
Vol 10 (6) ◽  
pp. 062302-62306
Author(s):  
Jun Chen Jun Chen ◽  
Guanghan Fan Guanghan Fan ◽  
Wei Pang Wei Pang ◽  
Shuwen Zheng Shuwen Zheng ◽  
Yunyan Zhang Yunyan Zhang
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Dual Wavelength ◽  
Light Emitting ◽  
P Type ◽  
Wavelength Light

scholarly journals Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells

2012 ◽  
Vol 57 (20) ◽  
pp. 2562-2566 ◽  
Author(s):  
YiQin Xu ◽  
GuangHan Fan ◽  
DeTao Zhou ◽  
Xin Li ◽  
TaiPing Lu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Dual Wavelength ◽  
Light Emitting ◽  
Wavelength Light

Electron-Cooper-pair operated long-wavelength light emitting diodes

2010 ◽  
Author(s):  
H. Sasakura ◽  
K. Tanaka ◽  
J.-H. Huh ◽  
T. Akazaki ◽  
H. Kumano ◽  
...  
Keyword(s):  
Cooper Pair ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Long Wavelength ◽  
Wavelength Light

Improved Performance of Near UV GaN-Based Light Emitting Diodes With Asymmetric Triangular Multiple Quantum Wells

2019 ◽  
Vol 55 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Heng Li ◽  
Chia-Jui Chang ◽  
Shiou-Yi Kuo ◽  
Hao-Cheng Wu ◽  
Huamao Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Improved Performance
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