Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

2011 ◽  
Vol 50 (10R) ◽  
pp. 104302
Author(s):  
Akira Endoh ◽  
Issei Watanabe ◽  
Takashi Mimura ◽  
Toshiaki Matsui
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Recess

scholarly journals Scaling of pHEMTs to Decanano Dimensions

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
K. Kalna ◽  
A. Asenov ◽  
K. Elgaid ◽  
I. Thayne
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Limiting Factor ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

scholarly journals Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

2015 ◽  
Vol 107 (15) ◽  
pp. 153504 ◽  
Author(s):  
Sanyam Bajaj ◽  
Omor F. Shoron ◽  
Pil Sung Park ◽  
Sriram Krishnamoorthy ◽  
Fatih Akyol ◽  
...  
Keyword(s):  
Electron Transport ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Density Dependent ◽  
Electron Mobility Transistors

Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

2007 ◽  
Vol 46 (2) ◽  
pp. 478-484 ◽  
Author(s):  
Chih-Yuan Chan ◽  
Ting-Chi Lee ◽  
Shawn S. H. Hsu ◽  
Leaf Chen ◽  
Yu-Syuan Lin
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Recess

Dual Gate-Recess Structure of Metamorphic High-Electron-Mobility Transistors for Enhancing f[sub max]

2008 ◽  
Vol 155 (12) ◽  
pp. H987 ◽  
Author(s):  
Jung-Hun Oh ◽  
Min Han ◽  
Sung-Woon Moon ◽  
Seokhun Lee ◽  
In-Seok Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Gate Recess
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