Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.09mf11 ◽

2012 ◽

Vol 51 (9S2) ◽

pp. 09MF11 ◽

Author(s):

Kyeong Min Yu ◽

Hye Ji Moon ◽

Min Ki Ryu ◽

Kyoung Ik Cho ◽

Eui-Jung Yun ◽

...

Keyword(s):

Thin Film ◽

Electron Beam ◽

Thin Film Transistors ◽

High Energy ◽

Energy Electron ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

High Energy Electron ◽

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Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.09mf11 ◽

2012 ◽

Vol 51 ◽

pp. 09MF11

Author(s):

Kyeong Min Yu ◽

Hye Ji Moon ◽

Min Ki Ryu ◽

Kyoung Ik Cho ◽

Eui-Jung Yun ◽

...

Keyword(s):

Thin Film ◽

Electron Beam ◽

Thin Film Transistors ◽

High Energy ◽

Energy Electron ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

High Energy Electron ◽

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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.04.025 ◽

2013 ◽

Vol 86 ◽

pp. 41-44 ◽

Author(s):

Xiaoming Huang ◽

Chenfei Wu ◽

Hai Lu ◽

Fangfang Ren ◽

Dunjun Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Carrier Transport ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Transport Mechanisms ◽

Zinc Oxide Thin Film ◽

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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

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Effect of high-energy electron beam irradiation on the device characteristics of IGZO-based transparent thin film transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.60.187 ◽

2012 ◽

Vol 60 (2) ◽

pp. 187-192 ◽

Author(s):

Hye Ji Moon ◽

Hye Ran Oh ◽

Byung Seong Bae ◽

Min Ki Ryu ◽

Kyoung Ik Cho ◽

...

Keyword(s):

Thin Film ◽

Electron Beam ◽

Thin Film Transistors ◽

Electron Beam Irradiation ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Beam Irradiation

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Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2972978 ◽

2020 ◽

Vol 67 (4) ◽

pp. 1606-1612 ◽

Author(s):

Xuewen Shi ◽

Congyan Lu ◽

Xinlv Duan ◽

Qian Chen ◽

Hansai Ji ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

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Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

Applied Physics Letters ◽

10.1063/1.3580611 ◽

2011 ◽

Vol 98 (15) ◽

pp. 153511 ◽

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.3357431 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102107 ◽

Author(s):

Sang-Yun Sung ◽

Jun Hyuk Choi ◽

Un Bin Han ◽

Ki Chang Lee ◽

Joon-Hyung Lee ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Ambient Atmosphere ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Journal of Applied Physics ◽

10.1063/1.4870457 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134501 ◽

Author(s):

A. J. Flewitt ◽

M. J. Powell

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Energy Analysis ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

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Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

Applied Physics Letters ◽

10.1063/1.4830368 ◽

2013 ◽

Vol 103 (20) ◽

pp. 202110 ◽

Author(s):

P. Liu ◽

T. P. Chen ◽

X. D. Li ◽

Z. Liu ◽

J. I. Wong ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Threshold Voltage Shift ◽

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