Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.101201 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 101201

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha ◽

Saeed Mohammadi

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

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Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.101201 ◽

2012 ◽

Vol 51 ◽

pp. 101201

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha ◽

Saeed Mohammadi

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091201 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091201

Author(s):

Jong Pil Kim ◽

Jae Young Song ◽

Sang Wan Kim ◽

Jae Hyun Park ◽

Woo Young Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

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Investigation of Mobility Enhancement Effect in Process-Induced Strained Ultrathin Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2124 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2124-2126 ◽

Author(s):

Akiko Ohata ◽

Claire Gallon ◽

Claire Fenouillet-Beranger ◽

Sorin Cristoloveanu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Enhancement Effect

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Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc12 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC12 ◽

Author(s):

Shuhei Amakawa ◽

Asato Toda ◽

Katsuroh Ohyama ◽

Naoya Higashiguchi ◽

Daisuke Hori ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Substrate Current ◽

History Effect ◽

Universal Relationship

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Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.99 ◽

2008 ◽

Vol 47 (1) ◽

pp. 99-103 ◽

Author(s):

Yoshifumi Nishi ◽

Atsuhiro Kinoshita ◽

Daisuke Hagishima ◽

Junji Koga

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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