Investigation of Local Bending Stress Effect on Complementary Metal–Oxide–Semiconductor Characteristics in Thinned Si Chip for Chip-to-Wafer Three-Dimensional Integration

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CB11 ◽  
Author(s):  
Hisashi Kino ◽  
Ji Choel Bea ◽  
Mariappan Murugesan ◽  
Kang Wook Lee ◽  
Takafumi Fukushima ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Stress Effect ◽  
Bending Stress

Monolithic-3D (M3D) Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical (CMOS-NEM) Hybrid Reconfigurable Logic (RL) Circuits

2020 ◽  
Vol 20 (7) ◽  
pp. 4176-4181
Author(s):  
Ji Wang Ko ◽  
Woo Young Choi
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Reconfigurable Logic ◽  
Signal Transfer ◽  
Technology Node

Monolithic-three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) hybrid reconfigurable logic (RL) circuits are compared and analyzed with CMOS-only RL ones in the 130-nm CMOS technology node. M3D CMOS-NEM hybrid RL circuits are superior to CMOS-only ones in terms of power consumption and signal transfer speed thanks to the NEM memory switches. As well as in the routing part, it has many advantages in the logic part following the switch.

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

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