Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

Low Frequency ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

Noise Characterization

Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Noise Analysis ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

Applied Physics Express ◽

10.7567/apex.6.084201 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084201

Author(s):

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Field Effect ◽

Noise Analysis ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

P Type

Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.038005 ◽

2014 ◽

Vol 53 (3) ◽

pp. 038005

Author(s):

San-Lein Wu ◽

Hsu-Feng Chiu ◽

Yee-Shyi Chang ◽

Osbert Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Journal of Applied Physics ◽

10.1063/1.3676255 ◽

2012 ◽

Vol 111 (2) ◽

pp. 024101 ◽

Cited By ~ 1

Author(s):

W. H. Liu ◽

K. L. Pey ◽

N. Raghavan ◽

X. Wu ◽

M. Bosman

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Metal Gate ◽

Random Telegraph Noise ◽

Telegraph Noise

Impact of SiGe source/drain induced-compressive strain on low frequency noise in high-k/metal gate p-channel metal-oxide-semiconductor transistors

10.1063/1.4828495 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183508

Author(s):

San Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Metal Oxide ◽

Compressive Strain ◽

Low Frequency ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Metal Gate ◽

High K

Accurate extraction of ΔI/I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode

10.1063/1.3543901 ◽

2011 ◽

Vol 98 (2) ◽

pp. 023505 ◽

Cited By ~ 2

Author(s):

Ju-Wan Lee ◽

Chan Hyeong Park ◽

Hyungcheol Shin ◽

Byung-Gook Park ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Edge Current ◽

High K ◽

Telegraph Noise ◽

Gate Edge

Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxide-semiconductor field-effect transistors

10.1063/1.3678023 ◽

2012 ◽

Vol 100 (3) ◽

pp. 033501 ◽

Cited By ~ 5

Author(s):

Ju-Wan Lee ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00059-7 ◽

2000 ◽

Vol 40 (11) ◽

pp. 1897-1903 ◽

Cited By ~ 6

Author(s):

J.A Chroboczek ◽

G Ghibaudo

Keyword(s):

Metal Oxide ◽

Heterojunction Bipolar Transistors ◽

Field Effect ◽

Low Frequency ◽

Bipolar Transistors ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K