Limiting Factor Analysis of Device Operation of Organic Thin Film Transistors by Field-Induced Electron Spin Resonance

AbstractTransition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemming from its crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degrees of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and atomic vacancies in devices have not been yet elucidated directly from a microscopic viewpoint. Here, we report the spin-states in thin-film transistors using operando electron spin resonance spectroscopy. We have observed clearly different electron spin resonance signals of the conduction electrons and atomic vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and the spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates different spin-scattering mechanisms compared to graphene, which will be useful for improvements of the device characteristics and new applications.

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Direct Observation of Field-Induced Carrier Dynamics in Pentacene Thin-Film Transistors by Electron Spin Resonance Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c175 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C175 ◽

Cited By ~ 10

Author(s):

Hiroyuki Matsui ◽

Tatsuo Hasegawa

Keyword(s):

Thin Film ◽

Electron Spin Resonance ◽

Electron Spin ◽

Direct Observation ◽

Thin Film Transistors ◽

Carrier Dynamics ◽

Electron Spin Resonance Spectroscopy ◽

Resonance Spectroscopy ◽

Spin Resonance

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Effective performance improvement of organic thin film transistors with multi-layer modifications

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200138 ◽

2020 ◽

Vol 91 (3) ◽

pp. 30201

Author(s):

Hang Yu ◽

Jianlin Zhou ◽

Yuanyuan Hao ◽

Yao Ni

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Organic Thin Film Transistors ◽

Electrical Performance ◽

Hole Injection ◽

Organic Thin Film ◽

Effective Performance ◽

Significant Performance ◽

P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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A Proposal of High Performance Organic Thin Film Transistors

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.130.161 ◽

2010 ◽

Vol 130 (2) ◽

pp. 161-166

Author(s):

Yoshinori Ishikawa ◽

Yasuo Wada ◽

Toru Toyabe ◽

Ken Tsutsui

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Organic Thin Film Transistors ◽

Organic Thin Film

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Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e96.c.1360 ◽

2013 ◽

Vol E96.C (11) ◽

pp. 1360-1366 ◽

Cited By ~ 3

Author(s):

Ichiro FUJIEDA ◽

Tse Nga NG ◽

Tomoya HOSHINO ◽

Tomonori HANASAKI

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Onset Voltage

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PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

Kongunadu Research Journal ◽

10.26524/krj264 ◽

2018 ◽

Vol 5 (2) ◽

pp. 16-18

Author(s):

Chandar Shekar B ◽

Ranjit Kumar R ◽

Dinesh K.P.B ◽

Sulana Sundar C ◽

Sunnitha S ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Thin Film Transistors ◽

Gravimetric Method ◽

Dip Coating ◽

Organic Thin Film Transistors ◽

Poly Vinyl Alcohol ◽

Organic Thin Film ◽

Glass Substrates ◽

Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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