Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition

High density and vertically well-aligned ZnO nanoneedle arrays were fabricated on the ZnO thin film deposited on silicon substrates. The ZnO buffer layer and nanoneedles were synthesized by metal organic chemical vapor deposition using diethylzinc and oxygen gas. The ZnO buffer film was grown at 250 °C and the growth temperature of nanoneedles was in the range of 480–500 °C. As-grown ZnO nanoneedles showed single crystalline structure of ZnO (002). The crystalline properties of three samples (A: as-deposited ZnO buffer layer, B: annealed buffer film, C: ZnO nanoneedles) were compared using XRD and Raman spectroscopy. The synthesized ZnO nanoneedles (sample C) showed highest crystalline quality among three samples. The field emission properties of ZnO nanoneedles were investigated, which showed low turn on field of 4.8 V μm−1 and high field enhancement factor of 3.2 × 103.

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Structural and optical properties of nearly stress-free m-plane ZnO film on (100) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

Applied Surface Science ◽

10.1016/j.apsusc.2009.06.127 ◽

2009 ◽

Vol 255 (22) ◽

pp. 9146-9148 ◽

Cited By ~ 6

Author(s):

Hui Lin ◽

Shengming Zhou ◽

Hao Teng ◽

Xiaorui Hou ◽

Tingting Jia ◽

...

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Zno Film ◽

Structural And Optical Properties ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Gan Buffer Layer

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Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2728 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2728-2732 ◽

Cited By ~ 4

Author(s):

Ching-Wu Wang ◽

Tong-Ji Sheu ◽

Yan-Kuin Su ◽

Meiso Yokoyama

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Electroluminescent Devices ◽

Deep Traps ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Mn Doped

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Epitaxial CoSi2 formation using an oxynitride buffer layer

Journal of Materials Research ◽

10.1557/jmr.2009.0320 ◽

2009 ◽

Vol 24 (8) ◽

pp. 2705-2710 ◽

Cited By ~ 1

Author(s):

Jaesang Lee ◽

Keunwoo Lee ◽

Dongock Kim ◽

Taeyong Park ◽

Honggyu Kim ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Vapor Deposition ◽

Growth Process ◽

Film Growth ◽

Chemical Vapor ◽

Ex Situ ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film growth process to obtain thicker films. To solve these problems, nitrogen atoms were incorporated into chemically grown oxide (SiOx) by NH3 plasma treatment prior to the deposition of a Co film on the oxynitride buffer layer using the metal organic chemical vapor deposition (MOCVD) method. Subsequently, ex situ rapid thermal annealing was performed to grow Co-silicide at a temperature between 400 °C and 700 °C for 1 min. The results show that the diffusion of Co was effectively controlled by the oxynitride buffer layer without the formation of additional SiOx in between Co and Si. Our findings indicate that by using an oxynitride buffer layer, CoSi2 films can be grown epitaxially despite the fact that the initial Co film was exposed to oxygen.

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