Bilayered Etch-Stop Layer of Al2O3/SiO2for High-Mobility In–Ga–Zn–O Thin-Film Transistors

2013 ◽  
Vol 52 (10R) ◽  
pp. 100209 ◽  
Author(s):  
Sang-Hee Ko Park ◽  
Jong Woo Kim ◽  
Min-Ki Ryu ◽  
Jae-Eun Pi ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Etch Stop ◽  
Etch Stop Layer

Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

2016 ◽  
Vol 63 (7) ◽  
pp. 2785-2789 ◽  
Author(s):  
Daichi Koretomo ◽  
Tatsuya Toda ◽  
Tokiyoshi Matsuda ◽  
Mutsumi Kimura ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Dry Etching ◽  
Field Effect Mobility ◽  
Anomalous Increase ◽  
Etch Stop ◽  
Etch Stop Layer

High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

2014 ◽  
Vol 22 (1) ◽  
pp. 23-28 ◽  
Author(s):  
Manoj Nag ◽  
Soeren Steudel ◽  
Ajay Bhoolokam ◽  
Adrian Chasin ◽  
Maarten Rockele ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Etch Stop ◽  
Etch Stop Layer

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel

High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

2012 ◽  
Vol 33 (6) ◽  
pp. 899-901 ◽  
Author(s):  
Tae-Jun Ha ◽  
Prashant Sonar ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Dual Gate ◽  
Carrier Velocity

scholarly journals High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

2006 ◽  
Vol 89 (11) ◽  
pp. 112108 ◽  
Author(s):  
Shuhei Tatemichi ◽  
Musubu Ichikawa ◽  
Toshiki Koyama ◽  
Yoshio Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Perylene Diimide ◽  
Thermal Treatments

Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors

2013 ◽  
Vol 184 ◽  
pp. 1-4 ◽  
Author(s):  
Hao Chang ◽  
Pengyue Wang ◽  
Haidong Li ◽  
Jidong Zhang ◽  
Donghang Yan
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Simple Method ◽  
Solvent Vapor

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno
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