15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EB04 ◽  
Author(s):  
Bui Thanh Tung ◽  
Fumiki Kato ◽  
Naoya Watanabe ◽  
Shunsuke Nemoto ◽  
Katsuya Kikuchi ◽  
...  
Author(s):  
Akiko Okada ◽  
Masatsugu Nimura ◽  
Naoko Unami ◽  
Akitsu Shigetou ◽  
Hirokazu Noma ◽  
...  

Author(s):  
Eiji Higurashi ◽  
Masao Nakagawa ◽  
Tadatomo Suga ◽  
Renshi Sawada

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.


1998 ◽  
Vol 34 (5) ◽  
pp. 493 ◽  
Author(s):  
Y. Miyamoto ◽  
M. Yoneyama ◽  
Y. Imai ◽  
K. Kato ◽  
H. Tsunetsugu

2005 ◽  
Vol 23 (2) ◽  
pp. 582-587 ◽  
Author(s):  
T. Hatta ◽  
T. Miyahara ◽  
M. Ishizaki ◽  
N. Okada ◽  
S. Zaizen ◽  
...  

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