Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells

2016 ◽  
Vol 55 (3) ◽  
pp. 032303 ◽  
Author(s):  
Mohammad Maksudur Rahman ◽  
Akio Higo ◽  
Halubai Sekhar ◽  
Mohd Erman Syazwan ◽  
Yusuke Hoshi ◽  
...  
Solar RRL ◽  
2021 ◽  
pp. 2100181
Author(s):  
Yali Sun ◽  
Pengfei Qiu ◽  
Siyu Wang ◽  
Hongling Guo ◽  
Rutao Meng ◽  
...  

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2021 ◽  
Vol 70 (18) ◽  
pp. 187702-187702
Author(s):  
Li Ye ◽  
◽  
Wang Xi-Xi ◽  
Wei Hui-Yun ◽  
Qiu Peng ◽  
...  

2015 ◽  
Vol 8 (3) ◽  
pp. 916-921 ◽  
Author(s):  
Byeong Jo Kim ◽  
Dong Hoe Kim ◽  
Yoo-Yong Lee ◽  
Hee-Won Shin ◽  
Gill Sang Han ◽  
...  

We report annealing-free compact TiOx layer by atomic layer deposition for high efficiency flexible perovskite solar cells, and maintained 95% of the initial PCE after 1000 bending cycles with 10 mm bending radius.


2013 ◽  
Vol 117 (11) ◽  
pp. 5584-5592 ◽  
Author(s):  
Katherine E. Roelofs ◽  
Thomas P. Brennan ◽  
Juan C. Dominguez ◽  
Colin D. Bailie ◽  
George Y. Margulis ◽  
...  

2017 ◽  
Vol 753 ◽  
pp. 156-162 ◽  
Author(s):  
Jae Yoo Kim

The perovskite solar cells (PSCs) with Al2O3 passivation layer were fabricated and characterized. The PSC have some advantages of easier and cheaper fabrication process than that of conventional Si solar cells, III-V compound semiconductor solar cells, and organic solar cells. The perovskite light harvester, CH3NH3PbI3, was deposited by vapor deposition on [compact TiO2 / F-doped tin oxide (FTO) / glass]. The advantage of vapor deposition over solution process is expected to be able to offer the thin film with smoother surface over larger area. Then, Al2O3 passivation layer was deposited by atomic layer deposition (ALD) on the CH3NH3PbI3 light harvester. Al2O3 passivation layer was expected to prevent the CH3NH3PbI3 light harvester from oxidation and improve the solar cell efficiency, and ALD has been one of the most effective methods to deposit Al2O3 thin film for last 25 years. The atomic layer deposited Al2O3 layer thickness was optimized from the solar cell characterization. The optimized power conversion efficiency (PCE) and Al2O3 thickness were ~8.0 % and ~10.0 nm, respectively.


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