Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EA06 ◽  
Author(s):  
Bin Gao ◽  
Jinfeng Kang ◽  
Zheng Zhou ◽  
Zhe Chen ◽  
Peng Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

scholarly journals A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification

2016 ◽  
Vol 63 (5) ◽  
pp. 1884-1892 ◽  
Author(s):  
Zizhen Jiang ◽  
Yi Wu ◽  
Shimeng Yu ◽  
Lin Yang ◽  
Kay Song ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Compact Model ◽  
Access Memory ◽  
Experiment Verification
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