Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

2006 ◽  
Vol 89 (10) ◽  
pp. 103509 ◽  
Author(s):  
K. Kinoshita ◽  
T. Tamura ◽  
M. Aoki ◽  
Y. Sugiyama ◽  
H. Tanaka
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Transition Metal Oxide ◽  
Resistive Random Access Memory ◽  
Dependent Data ◽  
Data Retention ◽  
Access Memory

Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device

2008 ◽  
Vol 47 (8) ◽  
pp. 6931-6933 ◽  
Author(s):  
Fumiyoshi Takano ◽  
Hisashi Shima ◽  
Hidenobu Muramatsu ◽  
Yutaka Kokaze ◽  
Yutaka Nishioka ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Reactive Ion Etching ◽  
Random Access ◽  
Random Access Memory ◽  
Transition Metal Oxide ◽  
Memory Device ◽  
Access Memory ◽  
Ion Etching ◽  
Resistance Random Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EA06 ◽  
Author(s):  
Bin Gao ◽  
Jinfeng Kang ◽  
Zheng Zhou ◽  
Zhe Chen ◽  
Peng Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory
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