Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ES04 ◽  
Author(s):  
Masahiro Inaba ◽  
Soichiro Todoroki ◽  
Kazuyoshi Nakada ◽  
Shinsuke Miyajima
Keyword(s):  
Amorphous Silicon ◽  
Carrier Lifetime ◽  
Silicon Oxide ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers ◽  
Temperature Dependent ◽  
High Quality ◽  
Amorphous Silicon Oxide

Minority carrier lifetime scan map in crystalline silicon wafers

1999 ◽  
Vol 70 (10) ◽  
pp. 4044-4046 ◽  
Author(s):  
J. Gervais ◽  
O. Palais ◽  
L. Clerc ◽  
S. Martinuzzi
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

2012 ◽  
Vol 112 (5) ◽  
pp. 054508 ◽  
Author(s):  
Fa-Jun Ma ◽  
Ganesh G. Samudra ◽  
Marius Peters ◽  
Armin G. Aberle ◽  
Florian Werner ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

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