Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1−xMgxO3−δ

2016 ◽  
Vol 55 (6S1) ◽  
pp. 06GJ05 ◽  
Author(s):  
Li Li ◽  
Akihiro Ikeda ◽  
Tanemasa Asano
Keyword(s):  
Low Temperature ◽  
Oxidation Catalyst ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Enhanced Oxidation

Mass spectrometric characterization of performance of a low-temperature oxidation catalyst

1990 ◽  
Vol 60 (3) ◽  
pp. 389-398 ◽  
Author(s):  
Chen C. Hsu ◽  
Charles S. Dulcey ◽  
James S. Horwitz ◽  
Ming C. Lin
Keyword(s):  
Low Temperature ◽  
Mass Spectrometric ◽  
Oxidation Catalyst ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Enhanced Oxidation of TiSi2 Films by As+ Implantation

1988 ◽  
Vol 100 ◽  
Author(s):  
O. W. Holland ◽  
D. Fathy
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Oxidation Process ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Chemical Effects ◽  
Implantation Techniques ◽  
Enhanced Oxidation

ABSTRACTThe influence of As+-ion implantation on the oxidation of TiSi2 films is investigated. It will be shown that implantation leads to a greatly increased rate of oxidation in a dry O2 ambient. Low-temperature oxidation of the implanted films not only results in substantial oxidation of the films, but completely alters the films' morphology. Different implantation techniques were used to isolate the effects of ion-induced damage from chemical effects, so that each could be separately studied. It will be shown that neither chemical nor damage effects are able, by themselves, to account for the enhanced oxidation. Rather, a model is proposed to explain the role of implantation in the oxidation process which depends on a synergistic relation between these two effects.

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