scholarly journals Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

2018 ◽  
Vol 57 (2) ◽  
pp. 021304 ◽  
Author(s):  
Ayumi Onaka-Masada ◽  
Toshiro Nakai ◽  
Ryosuke Okuyama ◽  
Hidehiko Okuda ◽  
Takeshi Kadono ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Low Oxygen ◽  
Cmos Image Sensors ◽  
Concentration Layer ◽  
Cluster Ion ◽  
Low Oxygen Concentration ◽  
Si Wafer ◽  
Ion Implanted

scholarly journals Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

2018 ◽  
Vol 57 (6) ◽  
pp. 061302 ◽  
Author(s):  
Yoshihiro Koga ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Room Temperature ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted

Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

2016 ◽  
Vol 55 (12) ◽  
pp. 121301 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Transition Metal ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

2017 ◽  
Vol 214 (7) ◽  
pp. 1700216 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean

2009 ◽  
Vol 145-146 ◽  
pp. 91-94 ◽  
Author(s):  
N. Kurumoto ◽  
Atsuro Eitoku ◽  
Katsuhiko Miya
Keyword(s):  
Surface Tension ◽  
Oxygen Concentration ◽  
Hydrophobic Surface ◽  
Critical Dimension ◽  
Significant Problem ◽  
Cleaning Process ◽  
Low Oxygen ◽  
Atmospheric Humidity ◽  
Low Oxygen Concentration ◽  
Si Wafer

As the critical dimension of LSI continues to decrease, the surface tension of water and its effect on the formation of watermarks is becoming a significant problem. It is known that watermarks are easily generated when a silicon hydrophobic surface is dried in a wet cleaning process. Many studies about watermarks have been reported [1, 2]. Additionally if the rinse and dry steps were performed under an inert (nitrogen) ambient and the rinse water had low oxygen concentration, watermarks could be effectively avoided [3, 4].

scholarly journals Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review (Phys. Status Solidi A 7∕2017)

2017 ◽  
Vol 214 (7) ◽  
pp. 1770141
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion

Effect of low oxygen concentration on activation of inflammation by Helicobacter pylori

2021 ◽  
Vol 560 ◽  
pp. 179-185
Author(s):  
Adiza Abass ◽  
Tokuju Okano ◽  
Kotchakorn Boonyaleka ◽  
Ryo Kinoshita-Daitoku ◽  
Shoji Yamaoka ◽  
...  
Keyword(s):  
Helicobacter Pylori ◽  
Oxygen Concentration ◽  
Low Oxygen ◽  
Low Oxygen Concentration

The Constant Low Oxygen Concentration in All the Target Cells for Mouse Tail Radionecrosis

1982 ◽  
Vol 92 (1) ◽  
pp. 172 ◽  
Author(s):  
J. H. Hendry ◽  
J. V. Moore ◽  
B. W. Hodgson ◽  
J. P. Keene
Keyword(s):  
Oxygen Concentration ◽  
Target Cells ◽  
Low Oxygen ◽  
Low Oxygen Concentration
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