Preparation of Highly C-Axis Oriented ZnO Thin Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition

1982 ◽  
Vol 21 (S3) ◽  
pp. 63 ◽  
Author(s):  
Masaru Shimizu ◽  
Takashi Yamamoto ◽  
Tadashi Shiosaki ◽  
Akira Kawabata
1991 ◽  
Vol 30 (Part 2, No. 3B) ◽  
pp. L441-L443 ◽  
Author(s):  
Wilson W. Wenas ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2006 ◽  
Vol 21 (7) ◽  
pp. 1632-1637 ◽  
Author(s):  
Maria Losurdo ◽  
Maria M. Giangregorio ◽  
A. Sacchetti ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
...  

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2·N,N,N′,N′-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function.


1993 ◽  
Vol 32 (Part 1, No. 2) ◽  
pp. 726-730 ◽  
Author(s):  
Masahiro Yoshino ◽  
Wilson W. Wenas ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2006 ◽  
Vol 510-511 ◽  
pp. 998-1001
Author(s):  
Jae Young Park ◽  
Yong Sung Hong ◽  
Sang Sub Kim

ZnO thin films were synthesized by metalorganic chemical vapor deposition on Al2O3 (0001) substrates particularly using isopropyl alcohol for oxygen precursor. Change in microstructure was investigated depending on the growth temperature and the O/Zn precursor ratio. Under an optimized condition, ZnO thin films having a very smooth surface and dense cross-sectional microstructure were obtained while possessing epitaxial crystalline alignment. However, the photoluminescent spectrum lacks the band-edge emission.


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