Effects of Magnetic Fields and Excited Plasma Species on Silicon Oxide Film Formation by Microwave Plasma CVD

1988 ◽  
Author(s):  
Takuya Fukuda ◽  
Kazuo Suzuki ◽  
Yasuhiro Mochizuki ◽  
Michio Ohue ◽  
Naohiro Momma ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Film Formation ◽  
Plasma Cvd ◽  
Silicon Oxide Film ◽  
Plasma Species ◽  
Microwave Plasma Cvd

Effects of Applied Magnetic Fields on Silicon Oxide Films Formed by Microwave Plasma CVD

1988 ◽  
Vol 27 (Part 2, No. 10) ◽  
pp. L1962-L1965 ◽  
Author(s):  
Takuya Fukuda ◽  
Kazuo Suzuki ◽  
Shigeru Takahashi ◽  
Yasuhiro Mochizuki ◽  
Michio Ohue ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Oxide Films ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Effects of Excited Plasma Species on Silicon Oxide Films Formed by Microwave Plasma CVD

1989 ◽  
Vol 28 (Part 1, No. 6) ◽  
pp. 1035-1040 ◽  
Author(s):  
Takuya Fukuda ◽  
Michio Ohue ◽  
Naohiro Momma ◽  
Kazuo Suzuki ◽  
Tadashi Sonobe
Keyword(s):  
Silicon Oxide ◽  
Microwave Plasma ◽  
Oxide Films ◽  
Plasma Cvd ◽  
Plasma Species ◽  
Microwave Plasma Cvd

Silicon Oxide Film Formation by the Simultaneous use of a Microwave Ion Source and an Icb System

1989 ◽  
Vol 157 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa
Keyword(s):  
Oxide Film ◽  
Substrate Temperature ◽  
Ionization Energy ◽  
Incident Energy ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Source ◽  
Silicon Oxide Film ◽  
Microwave Ion Source ◽  
Simultaneous Use

ABSTRACTSiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.

scholarly journals Deposition of Silicon Oxide Film on Unheated Substrate Using Low Frequency 50Hz Plasma CVD Method

1991 ◽  
Vol 111 (12) ◽  
pp. 1064-1070
Author(s):  
Mitsuo Shimozuma ◽  
Motohiro Ishikawa ◽  
Gen Tochitani ◽  
Hiroaki Tagashira
Keyword(s):  
Oxide Film ◽  
Silicon Oxide ◽  
Low Frequency ◽  
Plasma Cvd ◽  
Silicon Oxide Film ◽  
Cvd Method

Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

1990 ◽  
Vol 29 (Part 1, No. 1) ◽  
pp. 219C-219C
Author(s):  
Haruki Komano ◽  
Youji Ogawa ◽  
Tadahiro Takigawa
Keyword(s):  
Oxide Film ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Beam ◽  
Silicon Oxide Film

scholarly journals Hydrophilic Silicon Oxide Film by Pulsed Plasma CVD

Shinku ◽  
2007 ◽  
Vol 50 (10) ◽  
pp. 635-638 ◽  
Author(s):  
Yoshihiro KAIZUMA
Keyword(s):  
Oxide Film ◽  
Silicon Oxide ◽  
Pulsed Plasma ◽  
Plasma Cvd ◽  
Silicon Oxide Film

Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

1989 ◽  
Vol 28 (Part 1, No. 11) ◽  
pp. 2372-2375 ◽  
Author(s):  
Haruki Komano ◽  
Youji Ogawa ◽  
Tadahiro Takigawa
Keyword(s):  
Oxide Film ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Beam ◽  
Silicon Oxide Film
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