Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

2001 ◽  
Vol 48 (8) ◽  
pp. 1550-1555 ◽  
Author(s):  
K. Sekine ◽  
Y. Saito ◽  
M. Hirayama ◽  
T. Ohmi
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Film Formation ◽  
Oxygen Radical ◽  
High Density ◽  
Silicon Oxide Film

Silicon Oxide Film Formation by the Simultaneous use of a Microwave Ion Source and an Icb System

1989 ◽  
Vol 157 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa
Keyword(s):  
Oxide Film ◽  
Substrate Temperature ◽  
Ionization Energy ◽  
Incident Energy ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Source ◽  
Silicon Oxide Film ◽  
Microwave Ion Source ◽  
Simultaneous Use

ABSTRACTSiO2 films were prepared at a substrate temperature of 100°C by the simultaneous use of a microwave ion source and an ICB system. Transparent and good insulating SiO2 films could be obtained by using 02 gas ions, and they were thermally and chemically stable. Furthermore, both the ionization energy and the incident energy of the 02 gas ions were found to enhance the chemical reaction between SiO and 02 molecules, resulting in the Si02 film formation at a low substrate temperature.

Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

1990 ◽  
Vol 29 (Part 1, No. 1) ◽  
pp. 219C-219C
Author(s):  
Haruki Komano ◽  
Youji Ogawa ◽  
Tadahiro Takigawa
Keyword(s):  
Oxide Film ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Beam ◽  
Silicon Oxide Film

Effects of Magnetic Fields and Excited Plasma Species on Silicon Oxide Film Formation by Microwave Plasma CVD

1988 ◽  
Author(s):  
Takuya Fukuda ◽  
Kazuo Suzuki ◽  
Yasuhiro Mochizuki ◽  
Michio Ohue ◽  
Naohiro Momma ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Film Formation ◽  
Plasma Cvd ◽  
Silicon Oxide Film ◽  
Plasma Species ◽  
Microwave Plasma Cvd

scholarly journals Passivation of Silicon Oxide Film Deposited at Low Temperature by Annealing in Nitrogen Ambient

2006 ◽  
Vol 19 (4) ◽  
pp. 334-338
Author(s):  
Jun-Sik Kim ◽  
Ho-Kyoon Chung ◽  
Byoung-Deog Choi ◽  
Ki-Yong Lee ◽  
Jun-Sin Yi
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Silicon Oxide ◽  
Silicon Oxide Film

Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

1989 ◽  
Vol 28 (Part 1, No. 11) ◽  
pp. 2372-2375 ◽  
Author(s):  
Haruki Komano ◽  
Youji Ogawa ◽  
Tadahiro Takigawa
Keyword(s):  
Oxide Film ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Film Formation ◽  
Ion Beam ◽  
Silicon Oxide Film
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