Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy

1996 ◽  
Author(s):  
Josep L. ALAY ◽  
Masataka HIROSE
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Early Stages

Ion Beam Study of Early Stages of Growth of GaN films on Sapphire

2002 ◽  
Vol 743 ◽  
Author(s):  
Eugen M. Trifan ◽  
David C. Ingram
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Ex Situ ◽  
Crystallographic Axis ◽  
In Situ Characterization ◽  
X Ray ◽  
Ion Channeling ◽  
Stages Of Growth ◽  
Early Stages

ABSTRACTAn innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.

Coadsorption of D2O and CO on Pt(111) Studied by in Situ High-Resolution X-ray Photoelectron Spectroscopy

Langmuir ◽  
2004 ◽  
Vol 20 (5) ◽  
pp. 1819-1826 ◽  
Author(s):  
M. Kinne ◽  
T. Fuhrmann ◽  
J. F. Zhu ◽  
B. Tränkenschuh ◽  
R. Denecke ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
X Ray

In situ high-resolution X-ray photoelectron spectroscopy of light-induced changes in As–Se glasses

2000 ◽  
Vol 274 (1-3) ◽  
pp. 115-123 ◽  
Author(s):  
H Jain ◽  
S Krishnaswami ◽  
A.C Miller ◽  
P Krecmer ◽  
S.R Elliott ◽  
...  
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Induced Changes

Kinetic parameters of CO adsorbed on Pt(111) studied by in situ high resolution x-ray photoelectron spectroscopy

2002 ◽  
Vol 117 (23) ◽  
pp. 10852-10859 ◽  
Author(s):  
M. Kinne ◽  
T. Fuhrmann ◽  
C. M. Whelan ◽  
J. F. Zhu ◽  
J. Pantförder ◽  
...  
Keyword(s):  
High Resolution ◽  
Kinetic Parameters ◽  
Photoelectron Spectroscopy ◽  
X Ray

Formation and nitridation of InGa composite droplets on Si(111): In-situ study by high resolution X-ray photoelectron spectroscopy

2014 ◽  
Vol 303 ◽  
pp. 297-305
Author(s):  
B. Qi ◽  
S. Shayestehaminzadeh ◽  
S. Ólafsson ◽  
M. Göthelid ◽  
H.P. Gislason
Keyword(s):  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
In Situ Study

Kinetics of the CO oxidation reaction on Pt(111) studied by in situ high-resolution x-ray photoelectron spectroscopy

2004 ◽  
Vol 120 (15) ◽  
pp. 7113-7122 ◽  
Author(s):  
M. Kinne ◽  
T. Fuhrmann ◽  
J. F. Zhu ◽  
C. M. Whelan ◽  
R. Denecke ◽  
...  
Keyword(s):  
High Resolution ◽  
Co Oxidation ◽  
Photoelectron Spectroscopy ◽  
Oxidation Reaction ◽  
X Ray ◽  
Co Oxidation Reaction ◽  
Kinetics Of
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