Propose of New Mixture Target for Low Temperature and High Rate Deposition of PZT Thin Films by Reactive Sputtering

1997 ◽  
Author(s):  
Tomonobu HATA ◽  
WeiXiao ZHANG ◽  
Shinya KAWAGOE ◽  
Kimihiro SASAKI
Shinku ◽  
2006 ◽  
Vol 49 (7) ◽  
pp. 424-429
Author(s):  
Terumitsu TANAKA ◽  
Kazunori OSHIRO ◽  
Hirotaka FUJIMORI ◽  
Hiroki KURISU ◽  
Yoshihiro SHIMOSATO ◽  
...  

1996 ◽  
Vol 441 ◽  
Author(s):  
Sung-Tae Kim ◽  
Hyun-Ho Kim ◽  
Moon-Yong Lee ◽  
Won-Jong Lee

AbstractPerovskite-phase lead zirconate titanate (PZT) thin films were fabricated at 4751C by the electron cyclotron resonance (ECR) plasma enhanced DC magnetron multi-target reactive sputtering method on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates. Stoichiometric perovskite PZT films were readily obtained on Pt/Ti/SiO2/Si substrates because Ti atoms which were out-diffused to the Pt surface facilitated Pb incorporation by forming lead titanate at the early stage of deposition process. Activation of oxygen by ECR plasma facilitated the oxidation reaction and Pb incorporation into the film. Thus perovskite-phase PZT can be obtained on the Pt/SiO2/Si substrate.


2000 ◽  
Vol 208 (1-4) ◽  
pp. 541-545 ◽  
Author(s):  
X.J Meng ◽  
J.G Cheng ◽  
B Li ◽  
S.L Guo ◽  
H.J Ye ◽  
...  

2001 ◽  
Vol 36 (1-4) ◽  
pp. 53-62 ◽  
Author(s):  
Paul Muralt ◽  
Stephane Hiboux ◽  
Claude Mueller ◽  
Thomas Maeder ◽  
Laurent Sagalowicz ◽  
...  

2014 ◽  
Vol 32 (4) ◽  
pp. 041515 ◽  
Author(s):  
Grzegorz Greczynski ◽  
Jun Lu ◽  
Stephan Bolz ◽  
Werner Kölker ◽  
Christoph Schiffers ◽  
...  

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