scholarly journals Targets for High Rate Reactive Sputtering. Propose of Reactive Sputtering using Solid Oxygen Source for Low-Temperature and High Deposition Rate Fabrication of Pb(Zr,Ti)O3 Thin Film.

Shinku ◽  
2000 ◽  
Vol 43 (8) ◽  
pp. 785-789
Author(s):  
Shinya KAWAGOE ◽  
Je-Deok KIM ◽  
Yukio YOSHIDA ◽  
Kimihiro SASAKI ◽  
Tomonobu HATA
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Deposition Rate ◽  
Reactive Sputtering ◽  
High Rate ◽  
High Deposition Rate ◽  
Solid Oxygen

CUBIC STRUCTURE AND CATION DISORDERING IN YBCO THIN FILM DEPOSITED BY HIGH SPEED PULSED LASER DEPOSITION

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3732-3734
Author(s):  
JEONG-DAE SUH ◽  
GUN YONG SUNG ◽  
KWANG YONG KANG
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Deposition Rate ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Rate ◽  
High Deposition Rate ◽  
Ybco Thin Film ◽  
Cubic Structure

We have investigated the crystalline structure of high rate deposited YBa 2 Cu 3 O x thin films prepared by high speed pulsed laser deposition. A cation disordered cubic structure with lattice parameter of 0.39 nm was found in YBCO thin film deposited at 12.2 nm/s deposition rate and 650°C substrate temperature conditions. The short range ordered cubic YBa 2 Cu 3 O x thin film growth at high deposition rate was explained by the short migration length of Y and Ba cation atoms owing to the high incident flux rate.

High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

2001 ◽  
Vol 9 (5) ◽  
pp. 333-340 ◽  
Author(s):  
Lars Oberbeck ◽  
Jan Schmidt ◽  
Thomas A. Wagner ◽  
Ralf B. Bergmann
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Epitaxial Layers ◽  
Epitaxial Silicon

Impact of Deposition Rate on the Structural and Magnetic Properties of Sputtered Ni/Cu Multilayer Thin Films

2017 ◽  
Vol 73 (1) ◽  
pp. 85-90 ◽  
Author(s):  
Ali Karpuz ◽  
Salih Colmekci ◽  
Hakan Kockar ◽  
Hilal Kuru ◽  
Mehmet Uckun
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Deposition Rate ◽  
High Rate ◽  
Cubic Phase ◽  
High Deposition Rate ◽  
Multilayer Thin Films ◽  
Face Centered Cubic ◽  
Deposition Rates ◽  
Cu Films

AbstractThe structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, Ms, values were 90 and 138 emu/cm3 for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, Mr, values were also found to be 48 and 71 emu/cm3 for the low and high deposition rates, respectively. The coercivity, Hc, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the Hc values. The Ms, Mr, and Hc values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

Technique for High-Rate, Low-Temperature Deposition of TiO2Photocatalytic Thin Film Using Radical-Assisted Sputtering

2011 ◽  
Vol 50 (1R) ◽  
pp. 010204 ◽  
Author(s):  
Daisuke Noguchi ◽  
Tomohiro Eto ◽  
Kazuya Kodama ◽  
Yukie Higashimaru ◽  
Shoji Fukudome ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Rate ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Propose of New Mixture Target for Low Temperature and High Rate Deposition of PZT Thin Films by Reactive Sputtering

1997 ◽  
Author(s):  
Tomonobu HATA ◽  
WeiXiao ZHANG ◽  
Shinya KAWAGOE ◽  
Kimihiro SASAKI
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Reactive Sputtering ◽  
High Rate ◽  
Pzt Thin Films

High performance amorphous-silicon thin film transistors prepared by catalytic chemical vapor deposition with high deposition rate

2001 ◽  
Vol 395 (1-2) ◽  
pp. 330-334 ◽  
Author(s):  
Masahiro Sakai ◽  
Takayuki Tsutsumi ◽  
Tatsuo Yoshioka ◽  
Atsushi Masuda ◽  
Hideki Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
High Performance ◽  
Chemical Vapor ◽  
High Deposition Rate ◽  
Silicon Thin Film

High-quality and low-temperature epitaxial Si films deposited at very high deposition rate

2001 ◽  
Vol 225 (2-4) ◽  
pp. 335-339 ◽  
Author(s):  
Ralf B. Bergmann ◽  
Lars Oberbeck ◽  
Thomas A. Wagner
Keyword(s):  
Low Temperature ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
High Quality ◽  
Si Films ◽  
Very High
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