Hot-Phonon Effects on High-Frequency Performance of Two-Dimensional Hot Electrons in GaAs and In0.53Ga0.47As Quantum Wells

1997 ◽  
Author(s):  
S. K. Sarkar ◽  
P. K. Ghosh ◽  
D. Chattopadhyay
Keyword(s):  
Quantum Wells ◽  
High Frequency ◽  
Hot Electrons ◽  
Two Dimensional ◽  
High Frequency Performance

NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs

2004 ◽  
Vol 14 (03) ◽  
pp. 632-639
Author(s):  
DMITRY VEKSLER ◽  
MICHAEL S. SHUR ◽  
V. E. HOUTSMA ◽  
N. G. WEIMANN ◽  
Y. K. CHEN
Keyword(s):  
Numerical Investigation ◽  
High Frequency ◽  
Doping Concentration ◽  
Series Resistance ◽  
Lateral Diffusion ◽  
Hot Electrons ◽  
Doping Profile ◽  
Doping Profiles ◽  
Push Out ◽  
High Frequency Performance

Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased ft and fmax; decreasing of the collector doping concentration and shrinking the collector thickness reduced the collector transit time. Accounting for the lateral diffusion of hot electrons in the device with submicron emitter was found to be important in the transistor optimization process. This effect determines the effective thickness of the emitter finger and the value of the push-out current.

Hot Electron Relaxation in Quantum Wells

1986 ◽  
Vol 77 ◽  
Author(s):  
S. A. Lyon
Keyword(s):  
Crystal Growth ◽  
Steady State ◽  
Quantum Wells ◽  
Hot Electrons ◽  
Two Dimensional ◽  
Hot Electron ◽  
Carrier Distribution ◽  
Bulk Gaas ◽  
Bulk Semiconductors ◽  
Electron Relaxation

ABSTRACTHot electron relaxation in bulk semiconductors has been studied for several decades, but only through recent advances in crystal growth has it become possible to investigate the ther-malization of hot quasi-two-dimensional carriers in quantum wells. These same advances have opened the possibility of constructing various semiconductor devices which rely on hot electrons for their operation. We discuss experimental results on the energy relaxation of hot electrons in GaAs/AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photoexcited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared to results from similar experiments with bulk GaAs.

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