The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films

2000 ◽  
Author(s):  
Yoshihide Wakayama ◽  
Takeshi Ohkawa ◽  
Osamu Nakamura ◽  
Sadao Kobayashi ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Organic Compounds ◽  
Oxide Films ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Thin Gate Oxide

Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 900-902 ◽  
Author(s):  
Jinzo Watanabe ◽  
Yasuaki Kawai ◽  
Nobuhiro Konishi ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Gate Oxide ◽  
Low Energy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
High Integrity ◽  
Thin Gate Oxide

Single-Wafer Hot Wall Rapid Thermal Processing for Thin Gate Oxide Films

2002 ◽  
Vol 5 (5) ◽  
pp. F11 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Marci Schaefer ◽  
Joseph Sisson ◽  
Carl Barelli ◽  
Jeff Bailey ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Gate Oxide ◽  
Thin Gate Oxide

A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

2014 ◽  
Vol 696 ◽  
pp. 57-61
Author(s):  
Ling Sun ◽  
Yu Wei Zhou ◽  
Hong Wang ◽  
Xiang Dong Luo ◽  
Jia Yuan Guo
Keyword(s):  
Gate Oxide ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Oxide Breakdown ◽  
Simulation Based ◽  
Fundamental Understanding ◽  
Thin Gate Oxide ◽  
The Relationship

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

Influence of Si Substrate Crystallinity on Device Performance

1996 ◽  
Vol 442 ◽  
Author(s):  
T. Iwamoto ◽  
J. Takano ◽  
K. Makihara ◽  
T. Ohmi
Keyword(s):  
Gate Oxide ◽  
Device Performance ◽  
Electrical Characteristics ◽  
Floating Zone ◽  
Si Substrate ◽  
Substrate Quality ◽  
Mos Devices ◽  
Strong Candidate ◽  
Thin Gate Oxide ◽  
Surface Microroughness

AbstractWe have demonstrated the influence of surface microroughness on the electrical characteristics of MOS devices and investigated the influence of wafer's manufacturing methods, such as Czochralski(Cz), floating-zone(FZ), and epitaxial(Epi) silicon wafers, on the susceptibility to the surface microroughness when some chemical treatment was performed. As a result, it was found that Cz and FZ wafers are very susceptible to the surface microroughness and the amount of the vacancy of Epi wafer is much smaller than that of another wafers. It was also demonstrated that the electrical characteristics of very thin gate oxide films are strongly influenced by the silicon substrate quality. Epi wafer is a strong candidate for fablication of highly-reliable devices on 300mm wafers.

Low temperature operation of ultra-thin gate oxide sub-0.1 μm MOSFETs

2002 ◽  
Vol 12 (3) ◽  
pp. 57-60 ◽  
Author(s):  
B. Cretu ◽  
F. Balestra ◽  
G. Ghibaudo ◽  
G. Guégan
Keyword(s):  
Low Temperature ◽  
Gate Oxide ◽  
Thin Gate Oxide

Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on Reliability

2021 ◽  
Author(s):  
Shuntaro Fujii ◽  
Shohei Hamada ◽  
Tatsushi Yagi ◽  
Isao Maru ◽  
Shogo Katsuki ◽  
...  
Keyword(s):  
Oxide Films ◽  
Gate Oxide
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