A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS

2014 ◽  
Vol 696 ◽  
pp. 57-61
Author(s):  
Ling Sun ◽  
Yu Wei Zhou ◽  
Hong Wang ◽  
Xiang Dong Luo ◽  
Jia Yuan Guo

The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.

2007 ◽  
Vol 7 (1) ◽  
pp. 74-83 ◽  
Author(s):  
Yung-Huei Lee ◽  
Neal R. Mielke ◽  
William McMahon ◽  
Yin-Lung Ryan Lu ◽  
Sangwoo Pae

2010 ◽  
Vol 57 (9) ◽  
pp. 2296-2305 ◽  
Author(s):  
David F. Ellis ◽  
Yuanzhong Zhou ◽  
Javier A. Salcedo ◽  
Jean-Jacques Hajjar ◽  
Juin J. Liou

2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1286-L1289 ◽  
Author(s):  
Hyun-Soo Kim ◽  
Ki-Sang Lee ◽  
Bo-Young Lee ◽  
Hak-Do Yoo ◽  
Seung-Ho Pyi ◽  
...  

2000 ◽  
Author(s):  
Yoshihide Wakayama ◽  
Takeshi Ohkawa ◽  
Osamu Nakamura ◽  
Sadao Kobayashi ◽  
Shigetoshi Sugawa ◽  
...  

Author(s):  
Yung-huei Lee ◽  
Neal Mielke ◽  
Marty Agostinelli ◽  
Sukirti Gupta ◽  
Ryan Lu ◽  
...  

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