Silicon Single-Electron Transistors and Single-Electron CCD

2001 ◽  
Vol 686 ◽  
Author(s):  
Yasuo Takahashi ◽  
Akira Fujiwara ◽  
Yukinori Ono ◽  
Hiroshi Inokawa
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Charge Coupled Device ◽  
Quantum Size ◽  
Single Electronics ◽  
In Series ◽  
Elementary Charge ◽  
Novel Method ◽  
Electron Transistors

AbstractWe have developed two types of devices for silicon-single-electronics; a single-electron transistor (SET) and a single-electron charge coupled device (CCD). Both devices were fabricated on SOI (silicon on insulator) wafers. For the SET fabrication, we used a novel method called pattern-dependent oxidation (PADOX), which exploits special phenomena that occur during thermal oxidation of a small silicon structure. The Si structures are converted into small Si SETs by consequence of stress-induced bandgap narrowing and quantum size effects. Since the size of the resultant Si island is about 10 nm, the SETs operate at relatively high temperatures. We have already developed several kinds of application of Si SETs by utilizing the special features of SETs. In addition, we have developed a single-electron CCD that enables us to manipulate a single electron without tunnel capacitors. The device utilizes small Si-wire MOSFETs connected in series, and an elementary charge can be transferred like in a CCD.

scholarly journals Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105005
Author(s):  
Mitsuki Ito ◽  
Mamiko Yagi ◽  
Moe Shimada ◽  
Jun-ichi Shirakashi
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
In Series ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2001 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk Kang Sung ◽  
Jong Duk Lee ◽  
Byung Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Modeling and simulation of single-electron transistors

2005 ◽  
Vol 1 (1) ◽  
Author(s):  
Lee Jia Yen ◽  
Ahmad Radzi Mat Isa ◽  
Karsono Ahmad Dasuki
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Inner Work ◽  
Single Electron Tunneling ◽  
Single Electronics ◽  
Electron Transistors ◽  
Discrete Charge

Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the principle of SET. Owing to the stochastic nature of the tunneling event, a tunneling electron is considered as a discrete charge. To simulate the SET, Monte Carlo method is used due to its reasonable accuracy in the single electronics simulation. A model is described and used to study the electronic properties of SET. Monte Carlo method follows the tunneling path of a representative number of electrons and it can gives a clear picture of the inner work of the single electron circuits.

scholarly journals Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4648-4652 ◽  
Author(s):  
M. Manoharan ◽  
Yoshishige Tsuchiya ◽  
Shunri Oda ◽  
Hiroshi Mizuta
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Ferromagnetic Single-Electron Transistor with RC Gate

2002 ◽  
Vol 746 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Yasushi Takemura
Keyword(s):  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Tunnel Magnetoresistance ◽  
In Series ◽  
Gate Potential ◽  
Macroscopic Quantum Tunneling ◽  
Charge States ◽  
Gate Resistance ◽  
Electron Transistors

ABSTRACTFerromagnetic single-electron transistors coupled to the controlling gate potential by the gate resistance and gate capacitance in series are studied quantitatively. In this type of the device, several metastable charge states are possible within the Coulomb blockade range. The enhancement and hysteresis of tunnel magnetoresistance on drain and gate voltages are predicted. Inelastic macroscopic quantum tunneling of charge and existence of several charge states play an important role for the unique behavior of the tunnel magnetoresistance. This implies that RC-coupled ferromagnetic single-electron transistors have a new functionality as novel magnetoresistive nanostructure devices.

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