Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

2004 ◽  
Author(s):  
Narihiko Maeda ◽  
Takashi Makimura ◽  
Chengxin Wang ◽  
Masanobu Hiroki ◽  
Toshiki Makimoto ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
High Transconductance

Enhanced CAD model for gate leakage current in heterostructure field effect transistors

1996 ◽  
Vol 43 (6) ◽  
pp. 845-851 ◽  
Author(s):  
Kie Young Lee ◽  
B. Lund ◽  
T. Ytterdal ◽  
P. Robertson ◽  
E.J. Martinez ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cad Model ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Heterostructure Field Effect Transistors

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

2012 ◽  
Vol 52 (7) ◽  
pp. 1323-1327 ◽  
Author(s):  
J. Kováč ◽  
A. Šatka ◽  
A. Chvála ◽  
D. Donoval ◽  
P. Kordoš ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Heterostructure Field Effect Transistors

AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics

2002 ◽  
Vol 743 ◽  
Author(s):  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Tadashi Saitoh ◽  
Takehiko Tawara ◽  
Naoki Kobayashi
Keyword(s):  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Current Density ◽  
High Current ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Algan Barrier Layer ◽  
Gan Heterostructure ◽  
High Transconductance

ABSTRACTElectron transport properties and DC device characteristics have been examined in the AlGaN/GaN heterostructure field-effect transistors (HFETs) with back-doping design that makes it possible to obtain high two-dimensional electron gas (2DEG) densities even for the devices with thin AlGaN barrier layers. In the back-doping design, an asymmetric double-heterostructure is employed, and donor atoms are doped not only in the surface-side AlGaN layer but also in the underlying AlGaN layer. In this structure, electrons are efficiently supplied also from the back-doped AlGaN barrier layer to the GaN channel and merged into a single 2DEG layer, with the help of the negative polarization charges at the heterointerface between the GaN channel and the underlying AlGaN barrier layer. By using back-doping design, very high 2DEG densities around 3×1013 cm−2 has been achieved in the Al0.3Ga0.7N/GaN HFET whose barrier layer (Al0.3Ga0.7N) is designed to be as thin as 120 Å. An HFET with the gate-length of 1.5 μm has exhibited a high current density of 1.2 A/mm and a high transconductance of 200 mS/mm, which is ascribed to high 2DEG densities and thin barrier layers in these devices. HFETs with the back-doping design are thus promising for high-power applications.

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