Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors

Comparison of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6860 ◽

2006 ◽

Vol 45 (9A) ◽

pp. 6860-6865 ◽

Cited By ~ 44

Author(s):

Yiming Li ◽

Shao-Ming Yu

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Fluctuation ◽

Surrounding Gate ◽

Random Dopant

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Probability Distribution of Threshold Voltage Fluctuations in Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l552 ◽

2002 ◽

Vol 41 (Part 2, No. 5B) ◽

pp. L552-L554 ◽

Cited By ~ 2

Author(s):

Nobuyuki Sano ◽

Kazuya Matsuzawa ◽

Akira Hiroki ◽

Noriaki Nakayama

Keyword(s):

Probability Distribution ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Fluctuations

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A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation

Journal of Computational Electronics ◽

10.1007/s10825-006-8831-4 ◽

2006 ◽

Vol 5 (2-3) ◽

pp. 125-129 ◽

Cited By ~ 17

Author(s):

Yiming Li ◽

Shao-Ming Yu

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Quantum Correction ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Voltage Fluctuations

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.054301 ◽

2012 ◽

Vol 51 ◽

pp. 054301 ◽

Cited By ~ 5

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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Three-Dimensional Simulation of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Fin-Typed Field Effect Transistors

10.1063/1.2759705 ◽

2007 ◽

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Shao-Ming Yu ◽

Hsuan-Ming Huang

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Voltage Fluctuation ◽

Dimensional Simulation ◽

Random Dopant

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Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.044502 ◽

2009 ◽

Vol 48 (4) ◽

pp. 044502 ◽

Cited By ~ 18

Author(s):

Arifin Tamsir Putra ◽

Akio Nishida ◽

Shiro Kamohara ◽

Takaaki Tsunomura ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Accurate Prediction ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Voltage Variation ◽

Random Dopant

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Concise Analytical Threshold Voltage Model for Cylindrical Fully Depleted Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2948 ◽

2005 ◽

Vol 44 (5A) ◽

pp. 2948-2952 ◽

Cited By ~ 9

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Surrounding Gate ◽

Threshold Voltage Model

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A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.054301 ◽

2012 ◽

Vol 51 (5R) ◽

pp. 054301 ◽

Cited By ~ 14

Author(s):

Hsin-Kai Wang ◽

Sean Wu ◽

Te-Kuang Chiang ◽

Maw-Shung Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Short Channel ◽

Surrounding Gate ◽

Threshold Voltage Model

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Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.074202 ◽

2011 ◽

Vol 50 (7) ◽

pp. 074202 ◽

Cited By ~ 3

Author(s):

Guanghui Mei ◽

Guangxi Hu ◽

Shuyan Hu ◽

Jinglun Gu ◽

Ran Liu ◽

...

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Surrounding Gate

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Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.52.1909 ◽

2008 ◽

Vol 52 (6) ◽

pp. 1909-1912 ◽

Cited By ~ 6

Author(s):

Guang-Xi Hu ◽

Ran Liu ◽

Ting-Ao Tang ◽

Ling-Li Wang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Investigation ◽

Fully Depleted ◽

Surrounding Gate

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