Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

2009 ◽  
Vol 48 (4) ◽  
pp. 044502 ◽  
Author(s):  
Arifin Tamsir Putra ◽  
Akio Nishida ◽  
Shiro Kamohara ◽  
Takaaki Tsunomura ◽  
Toshiro Hiramoto
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Accurate Prediction ◽  
Oxide Semiconductor ◽  
Random Dopant Fluctuation ◽  
Voltage Variation ◽  
Random Dopant
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