Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeOx/W memory device

Mapping Intimacies ◽

10.7567/ssdm.2011.f-9-1 ◽

2011 ◽

Author(s):

S. Z. Rahaman ◽

S. Maikap ◽

S. K. Ray ◽

H. Y. Lee ◽

W. S. Chen ◽

...

Keyword(s):

Resistive Switching ◽

Memory Device ◽

Resistance Ratio ◽

Unipolar Resistive Switching

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Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dd11 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DD11 ◽

Author(s):

Sheikh Ziaur Rahaman ◽

Siddheswar Maikap ◽

Samit Kumar Ray ◽

Heng-Yuan Lee ◽

Wei-Su Chen ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Memory Device ◽

Resistance Ratio ◽

Germanium Oxide ◽

Switching Characteristics ◽

Oxide Solid Electrolyte ◽

Unipolar Resistive Switching

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Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dd11 ◽

2012 ◽

Vol 51 ◽

pp. 04DD11 ◽

Author(s):

Sheikh Ziaur Rahaman ◽

Siddheswar Maikap ◽

Samit Kumar Ray ◽

Heng-Yuan Lee ◽

Wei-Su Chen ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Memory Device ◽

Resistance Ratio ◽

Germanium Oxide ◽

Switching Characteristics ◽

Oxide Solid Electrolyte ◽

Unipolar Resistive Switching

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Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device

Applied Surface Science ◽

10.1016/j.apsusc.2015.11.022 ◽

2016 ◽

Vol 360 ◽

pp. 338-341 ◽

Author(s):

Lei Zhang ◽

Haiyang Xu ◽

Zhongqiang Wang ◽

Hao Yu ◽

Jiangang Ma ◽

...

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Memory Device ◽

Unipolar Resistive Switching

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Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer

IEEE Electron Device Letters ◽

10.1109/led.2012.2192252 ◽

2012 ◽

Vol 33 (6) ◽

pp. 803-805 ◽

Author(s):

Dai-Ying Lee ◽

Tseung-Yuen Tseng

Keyword(s):

Buffer Layer ◽

Resistive Switching ◽

Memory Device ◽

Ion Conductor ◽

Oxygen Ion Conductor ◽

Switching Characteristics ◽

Unipolar Resistive Switching

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Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2 film grown on Cu foil substrate for flexible nonvolatile memory device

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2016.11.180 ◽

2017 ◽

Vol 695 ◽

pp. 2669-2671 ◽

Author(s):

Hongjun Wang ◽

Yuanyuan Zhu ◽

Dejun Fu

Keyword(s):

Resistive Switching ◽

Tio2 Film ◽

Nonvolatile Memory ◽

Memory Device ◽

Nonvolatile Memory Device ◽

Switching Characteristics ◽

Cu Foil ◽

Foil Substrate ◽

Unipolar Resistive Switching

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Improvement of Unipolar Resistive Switching by N2 Annealing in Ni/ZrO2/TaN Memory Device

10.7567/ssdm.2014.ps-4-6 ◽

2014 ◽

Author(s):

T.L. Tsai ◽

T.H. Ho ◽

T.Y. Tseng

Keyword(s):

Resistive Switching ◽

Memory Device ◽

Unipolar Resistive Switching

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Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio-Organic Aloe Polysaccharides Thin Film

Advanced Materials Technologies ◽

10.1002/admt.201800007 ◽

2018 ◽

Vol 3 (5) ◽

pp. 1800007 ◽

Author(s):

Zhe Xi Lim ◽

Kuan Yew Cheong

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Device ◽

Nonvolatile Memory Device ◽

Unipolar Resistive Switching

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A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In 1-x Ga x )Se 2 /Mo resistive switching memory device

Applied Surface Science ◽

10.1016/j.apsusc.2017.10.073 ◽

2018 ◽

Vol 433 ◽

pp. 535-539 ◽

Author(s):

Tao Guo ◽

Bai Sun ◽

Shuangsuo Mao ◽

Shouhui Zhu ◽

Yudong Xia ◽

...

Keyword(s):

Resistive Switching ◽

Memory Device ◽

Resistance Ratio ◽

Resistive Switching Memory ◽

Ratio Change ◽

Doped Zno ◽

Switching Memory

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Unipolar Resistive Switching Characteristic of Double-Layer ZrO2 Memory Device

ECS Meeting Abstracts ◽

10.1149/ma2012-01/2/49 ◽

2012 ◽

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Memory Device ◽

Switching Characteristic ◽

Unipolar Resistive Switching ◽

Resistive Switching Characteristic

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Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/48/3/035108 ◽

2015 ◽

Vol 48 (3) ◽

pp. 035108 ◽

Author(s):

Tsung-Ling Tsai ◽

Tsung-Han Ho ◽

Tseung-Yuen Tseng

Keyword(s):

Resistive Switching ◽

Memory Device ◽

Unipolar Resistive Switching

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