Unipolar Resistive Switching Characteristic of Double-Layer ZrO2 Memory Device

2012 ◽  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Memory Device ◽  
Switching Characteristic ◽  
Unipolar Resistive Switching ◽  
Resistive Switching Characteristic

Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device

2016 ◽  
Vol 360 ◽  
pp. 338-341 ◽  
Author(s):  
Lei Zhang ◽  
Haiyang Xu ◽  
Zhongqiang Wang ◽  
Hao Yu ◽  
Jiangang Ma ◽  
...  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Memory Device ◽  
Unipolar Resistive Switching

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

2017 ◽  
Vol 19 (29) ◽  
pp. 18988-18995 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Double Layer ◽  
Resistive Switching ◽  
Layered Structure ◽  
Memory Device ◽  
Resistive Memory ◽  
Power Switching ◽  
Ultralow Power

Here we demonstrate low-power resistive switching in a Ni/SiNy/SiNx/p++-Si device by proposing a double-layered structure (SiNy/SiNx), where the two SiN layers have different trap densities.

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