Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free
2020 ◽
Vol 41
(1)
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pp. 179-182
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Keyword(s):
2019 ◽
Vol 7
◽
pp. 645-649
2016 ◽
Vol 55
(4S)
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pp. 04EB08
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