Characteristics and Material Analysis on the Drafts of Buddhist Paintings in the Late 19th and the Early 20th Century

2021 ◽  
Vol 53 (6) ◽  
pp. 77-84
Author(s):  
Su-Yea Lee ◽  
Yu-Ju Lee
Keyword(s):  
Material Analysis

Material analysis techniques using the ion mill

1996 ◽  
Vol 54 ◽  
pp. 1034-1035
Author(s):  
J. P. Benedict ◽  
R. M. Anderson ◽  
S. J. Klepeis
Keyword(s):  
Polished Surface ◽  
Surface Material ◽  
Analysis Techniques ◽  
Material Analysis ◽  
Optical Inspection ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis ◽  
Argon Ions ◽  
The Impact ◽  
Scanning Electron

Ion mills equipped with flood guns can perform two important functions in material analysis; they can either remove material or deposit material. The ion mill holder shown in Fig. 1 is used to remove material from the polished surface of a sample for further optical inspection or SEM ( Scanning Electron Microscopy ) analysis. The sample is attached to a pohshing stud type SEM mount and placed in the ion mill holder with the polished surface of the sample pointing straight up, as shown in Fig 2. As the holder is rotating in the ion mill, Argon ions from the flood gun are directed down at the top of the sample. The impact of Argon ions against the surface of the sample causes some of the surface material to leave the sample at a material dependent, nonuniform rate. As a result, the polished surface will begin to develop topography during milling as fast sputtering materials leave behind depressions in the polished surface.

Material Analysis of the Late 19th Century Iron Based Heritage Listed Constructions

2008 ◽  
Vol 45 (3) ◽  
pp. 101-121
Author(s):  
Jaromir Audy ◽  
Katarina Audy
Keyword(s):  
19Th Century ◽  
Late 19Th Century ◽  
Material Analysis ◽  
Iron Based

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

scholarly journals Algorithm for the determination of the angle of repose in bulk material analysis

2021 ◽  
Vol 383 ◽  
pp. 598-605
Author(s):  
Dominik Müller ◽  
Eric Fimbinger ◽  
Clemens Brand
Keyword(s):  
Bulk Material ◽  
Angle Of Repose ◽  
Material Analysis

scholarly journals Quantitative material analysis using secondary electron energy spectromicroscopy

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
W. Han ◽  
M. Zheng ◽  
A. Banerjee ◽  
Y. Z. Luo ◽  
L. Shen ◽  
...  
Keyword(s):  
Electron Energy ◽  
Close Agreement ◽  
Secondary Electron ◽  
Low Voltage ◽  
High Accuracy ◽  
Material Analysis ◽  
Auger Microscopy ◽  
New Applications ◽  
Voltage Scanning ◽  
Scanning Electron

AbstractThis paper demonstrates how secondary electron energy spectroscopy (SEES) performed inside a scanning electron microscope (SEM) can be used to map sample atomic number and acquire bulk valence band density of states (DOS) information at low primary beam voltages. The technique uses an electron energy analyser attachment to detect small changes in the shape of the scattered secondary electron (SE) spectrum and extract out fine structure features from it. Close agreement between experimental and theoretical bulk valance band DOS distributions was obtained for six different test samples, where the normalised root mean square deviation ranged from 2.7 to 6.7%. High accuracy levels of this kind do not appear to have been reported before. The results presented in this paper point towards SEES becoming a quantitative material analysis companion tool for low voltage scanning electron microscopy (LVSEM) and providing new applications for Scanning Auger Microscopy (SAM) instruments.

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