Die Attach Process Tool Development for Voids Calculation

Author(s):  
Frederick Ray I. Gomez ◽  
Rennier S. Rodriguez ◽  
Nerie R. Gomez
Keyword(s):  
2019 ◽  
Author(s):  
Natalie Wagner ◽  
Anita Acai ◽  
Sydney A. McQueen ◽  
Com McCarthy ◽  
Andrew McGuire ◽  
...  

Objective: The purpose of this study was to develop, implement, and evaluate the effectiveness of an assessment framework aimed at improving formative feedback practices in a Canadian orthopaedic postgraduate training program. Methods: Tool development began in 2014 and took place in 4 phases, each building upon the previous and informing the next. The reliability, validity, and educational impact of the tools were assessed on an ongoing basis, and changes were made accordingly. Results: One hundred eighty-two tools were completed and analyzed during the study period. Quantitative results suggested moderate to excellent agreement between raters (intraclass correlation coefficient = 0.54-0.93), and an ability of the tools to discriminate between learners at different stages of training (p’s < 0.05). Qualitative data suggested that the tools improved both the quality and quantity of formative feedback given by assessors and had begun to foster a culture change around assessment in the program. Conclusions: The tool development, implementation, and evaluation processes detailed in this article can serve as a model for other training programs to consider as they move towards adopting competency-based approaches and refining current assessment practices.


Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.


2009 ◽  
Vol 29 (10) ◽  
pp. 2841-2843
Author(s):  
Zi-hua LIAO ◽  
Hong-yan TAN ◽  
Jin-zhao WU

2008 ◽  
Author(s):  
Gregory K. Ovrebo

2020 ◽  
Vol 17 (5) ◽  
pp. 551-551
Author(s):  
Drahomíra Faktorová ◽  
R. Ellen R. Nisbet ◽  
José A. Fernández Robledo ◽  
Elena Casacuberta ◽  
Lisa Sudek ◽  
...  

Author(s):  
Ryo Kato ◽  
Masatoshi Okuda ◽  
Suguru Hashidate ◽  
Takamichi Mori ◽  
Junichiro Minami ◽  
...  

2016 ◽  
Vol 89 ◽  
pp. 1310-1314 ◽  
Author(s):  
Seyed Amir Paknejad ◽  
Ali Mansourian ◽  
Yohan Noh ◽  
Khalid Khtatba ◽  
Samjid H. Mannan

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.


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