Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

Optimizing the performance of the Au-Si system for high temperature die attach applications

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000068-000076 ◽  
Author(s):  
M.F. Sousa ◽  
S. Riches ◽  
C. Johnston ◽  
P.S. Grant
Keyword(s):  
High Temperature ◽  
Thermal Stresses ◽  
Microstructural Analysis ◽  
Thin Foil ◽  
Bonding Process ◽  
Acoustic Microscopy ◽  
Harsh Environments ◽  
Potential Candidate ◽  
Die Attach ◽  
Die Bonding

The operation of electronic packages under exceptionally harsh environments presents a significant challenge for the microelectronics industry, for example, in down-hole, well-logging and turbo-machinery applications. High temperature Au based solders are one potential candidate for die attachment for harsh environments and is already used in limited cases. For Au-Si die bonding, some of the Si is provided by diffusion from the Si die itself. Therefore, the interfacial reaction between the Si and Au-Si thin foil solder preform is a key factor in the control of the die bonding process. Unfortunately, during the die bonding process, defects such as voids, delaminations, and impurities are not unusual. These defects are caused by the assembly process, chemical impurities, soldering reactions, and thermal stresses. Understanding these defects is critical for the reliable performance of the devices after bonding. In this paper, optimization of the Au-Si eutectic die bonding has been performed and near 100% bonded area confirmed by scanning acoustic microscopy achieved consistently. Die attach reliability was investigated by thermal shock and thermal cycling treatments, after which the bonded area showed some signs of degradation. Shear strength testing and microstructural analysis were also carried out. Die bond optimisation gave a significant improvement in both bonded area and reliability.

scholarly journals Die-Attach Structure of Silicon-on-Glass MEMS Devices Considering Asymmetric Packaging Stress and Thermal Stress

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3979
Author(s):  
Jun Eon An ◽  
Usung Park ◽  
Dong Geon Jung ◽  
Chihyun Park ◽  
Seong Ho Kong
Keyword(s):  
Thermal Stress ◽  
Silicon Wafers ◽  
Experimental Results ◽  
Mems Devices ◽  
Microelectromechanical System ◽  
Die Attach ◽  
Lack Of Control ◽  
Die Bonding ◽  
Glass Process ◽  
Typical Process

Die attach is a typical process that induces thermal stress in the fabrication of microelectromechanical system (MEMS) devices. One solution to this problem is attaching a portion of the die to the package. In such partial die bonding, the lack of control over the spreading of the adhesive can cause non-uniform attachment. In this case, asymmetric packaging stress could be generated and transferred to the die. The performance of MEMS devices, which employ the differential outputs of the sensing elements, is directly affected by the asymmetric packaging stress. In this paper, we proposed a die-attach structure with a pillar to reduce the asymmetric packaging stress and the changes in packaging stress due to changes in the device temperature. To verify the proposed structure, we fabricated four types of differential resonant accelerometers (DRA) with the silicon-on-glass process. We confirmed experimentally that the pillar can control the spreading of the adhesive and that the asymmetric packaging stress is considerably reduced. The simulation and experimental results indicated that the DRAs manufactured using glass-on-silicon wafers as handle substrates instead of conventional glass wafers have a structure that compensates for the thermal stress.

Effect of Material Properties and Thickness of Die Attach on Delamination of Die Attach/Die Paddle Interface in Electronic Package

2010 ◽  
Author(s):  
Chia-Lung Chang ◽  
Po-Hsien Li
Keyword(s):  
Material Properties ◽  
Coefficient Of Thermal Expansion ◽  
Damage Parameter ◽  
Stress And Strain ◽  
Thermal Expansion Mismatch ◽  
The Finite Element Method ◽  
Electronic Package ◽  
Die Attach ◽  
Encapsulation Process ◽  
Die Bonding

The electronic package is a multi-layered structure that is consisted of several materials. Under the temperature loadings, the interfacial stresses between layered components are generated due to the CTE (coefficient of thermal expansion) mismatch between different materials. In die bonding process, the void or defect might exist at the die attach/die paddle interface. The void cause further delamination on the interface during the encapsulation process. In this study, the finite element method is used to construct the model of electronic package with a void on the die attach/die paddle interface. The energy release rate based on J integration, which is calculated by the stress and strain around the tip of crack, is used as a damage parameter to predict the tendency of further delamination during encapsulation. Effect of material properties (Young’s modulus and CTE) and die attach thickness on delamination of die attach/die paddle interface in package during encapsulation is studied.

Error Proof Inkless Die Bonding Process Development

2006 ◽  
Author(s):  
Wang ZhiJie ◽  
Sonder Wang ◽  
J.H. Wang ◽  
Yao SuYing ◽  
R. Han
Keyword(s):  
Process Development ◽  
Bonding Process ◽  
Die Bonding

scholarly journals Bonding Strength of Cu Sinter Die-Bonding Paste on Ni, Cu, Ag, and Au Surfaces under Pressureless Bonding Process

2020 ◽  
Vol 13 (0) ◽  
pp. E19-017-1-E19-017-11
Author(s):  
Dai Ishikawa ◽  
Bao Ngoc An ◽  
Matthias Mail ◽  
Helge Wurst ◽  
Benjamin Leyrer ◽  
...  
Keyword(s):  
Bonding Strength ◽  
Bonding Process ◽  
Die Bonding

Fabrication of Aluminum Nitride Thermal Substrate and Low-Temperature Die-Bonding Process for High Power LED

2018 ◽  
Vol 48 (1) ◽  
pp. 194-200 ◽  
Author(s):  
Pai-Jung Chang ◽  
Yue-Kai Tang ◽  
Wei-Han Lai ◽  
Anthony Shiaw-Tseh Chiang ◽  
C. Y. Liu
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
High Power ◽  
Bonding Process ◽  
High Power Led ◽  
Die Bonding
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