scholarly journals Flexible zinc oxide photoelectrode for photo electrochemical energy conversion

2021 ◽  
Author(s):  
T. Shiyani ◽  
I. Banerjee ◽  
Santosh K. Mahapatra ◽  
Asim K. Ray
Keyword(s):  
Zinc Oxide ◽  
Optical Band Gap ◽  
Solar Fuels ◽  
Flat Band ◽  
Flat Band Potential ◽  
Photoelectrochemical Properties ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
A Value

AbstractPhotoelectrochemical properties have been investigated for flexible photoelectrodes containing 310 nm thick ZnO film on spin-coated ITO/PET. The high crystalline structure of ZnO was studied using x-ray diffraction pattern. A value of 3.4 eV has been estimated for optical band gap from its absorption spectra. The flexible ZnO photoelectrode was demonstrated to generate photoelectrochemical current. The photocurrents are enhanced by 4% whereas flat-band potential is shifted by 8 V due to the illumination. Values of 1.022 and 0.714 AW−1 were found to be for photo switching and photoresponsivity, respectively. ZnO/ITO/PET can be used as a substrate for making flexible hybrid PEC devices to generate solar power and solar fuels.

scholarly journals Flexible ZnO photoelectrode for photo electrochemical energy conversion

2021 ◽  
Author(s):  
T. Shiyani ◽  
Indrani Banerjee ◽  
Santosh K. Mahapatra ◽  
Asim K Ray
Keyword(s):  
Band Gap ◽  
Diffraction Pattern ◽  
Absorption Spectra ◽  
Optical Band Gap ◽  
Solar Fuels ◽  
Photoelectrochemical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Pet Substrate

Abstract Photoelectrochemical properties have been investigated for flexible ZnO/ITO/PET photoelectrodes. ZnO was spin coated on ITO/PET substrate with thickness of about 310 nm. The high crystalline structure of ZnO was studied using x-ray diffraction pattern. A value of 3.4 eV has been estimated for optical band gap from its absorption spectra. The flexible ZnO photoelectrode was demonstrated to generate photoelectrochemical current. Values of 1.022 and 0.714 were found to be for photo switching and photoresponsivity, respectively. ZnO/ITO/PET can be used as a substrate for making flexible hybrid PEC devices to generate solar power and solar fuels.

Effects of Al on the Flat Band Potential of Nanostructured TiO2 Electrodes

2013 ◽  
Vol 291-294 ◽  
pp. 2731-2733
Author(s):  
Shu Ming Yang ◽  
Guang Hui Zhu ◽  
Shu Pei Guo
Keyword(s):  
Energy Gap ◽  
Visible Region ◽  
Raw Material ◽  
Flat Band ◽  
Flat Band Potential ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
Al Doping ◽  
Doped Tio2 ◽  
X Ray

In this paper, Al(NO3)3•9H2O was used as raw material and the nanoparticles of Al-doped TiO2 were prepared by hydrothermal method. The nanoparticles and films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Ultraviolet and Visible Spectroscopy (UV-Vis). The flat band potential (Efb) of nanostructured TiO2 and Al-doped TiO2 in acetone have been determined with spectroelectrochemistry measurement. The results show that Al doping decreases the energy gap and improves the absorption ability in visible region. On the other hand, Al doping TiO2 can effectively embarrass the crystal growth of TiO2. Specifically, the Efb of TiO2 and Al-doped TiO2 can be determined to be -0.6 V and -0.3V.

The Structural and Optical Properties of(Cu, Al):ZnO Films

2013 ◽  
Vol 641-642 ◽  
pp. 547-550 ◽  
Author(s):  
Ying Xiang Yang ◽  
Hong Lin Tan ◽  
Cheng Lin Ni ◽  
Chao Xiang
Keyword(s):  
Optical Properties ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Grain Sizes ◽  
Doped Zno

Un-doped and (Cu, Al)-doped ZnO thin films were prepared by sol-gel spin coating technique on glass substrate. The effect of(Cu, Al)incorporation on the structural, morphological and optical properties of the Zinc oxide (ZnO)film was investigated by means of X-ray diffraction, scanning electron microscopy and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with increasing of (Cu, Al) dopants amount in ZnO films.

Mechanism of Blue Shift of Optical Band Gap in Aluminum-Doped ZnO Thin Films with Blend Bond

2011 ◽  
Vol 685 ◽  
pp. 98-104
Author(s):  
Ling Shen ◽  
Cheng Shen ◽  
Jie Yang ◽  
Fei Xu ◽  
Zhong Quan Ma
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Optical Band Gap ◽  
Quartz Substrate ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Nano Crystalline

In this paper, aluminum–doped nano-crystalline zinc oxide (ZnO:Al or AZO) thin films were deposited on fused quartz substrate by pulsed laser ablation at various temperatures. The physical phase and surface morphology were characterized by using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The variation of the optical band gap (Egopt) of the films with the temperature was measured through transmittance in UV-VIS wavelength. The results showed that there was a blue shift of Egoptfrom 3.44 eV to 3.62 eV as the growing temperature decreased from 500°C to 200°C. The value of Egoptimmediately recurred from 3.30 to 3.35 eV after a thermal annealing of the samples at 700 °C, inclining to a normal value of bulk zinc oxide. The analyses of XRD and AFM testified that the presence of amorphous phase in the AZO films was the main reason for the blue shift of the optical band gap Egopt.

Reactions of (η5-C9H7)Rh(η2-C2H4)2 with quinones: molecular structure of [(η5-C9H7)Rh(2,3,5,6-C6O2(CH3)4)]

1999 ◽  
Vol 77 (2) ◽  
pp. 199-204
Author(s):  
Stephen A Westcott ◽  
Nicholas J Taylor ◽  
Todd B Marder
Keyword(s):  
Molecular Structure ◽  
Least Squares ◽  
Ground State ◽  
Slip Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Hinge Angle

Reactions of (η5-C9H7)Rh(η2-C2H4)2 (1) with quinones were investigated. Substitution of the labile ethylene ligands was observed upon addition of either duroquinone (2,3,5,6-tetramethyl-1,4-benzoquinone) or 1,4-benzoquinone to complex 1. The molecular structure of neutral (η5-C9H7)Rh(2,3,5,6-C6O2(CH3)4) (3), determined by X-ray diffraction, shows that the duroquinone ligand lies in a plane nearly parallel to the indenyl group. The carbonyl moieties of duroquinone lie in a plane incorporating Rh, C2, and the midpoint between C3a and C7a of the indenyl ring. The slip parameter (Δ= d(average Rh-C3a,7a) -d(average Rh-C1,3)) was calculated to be 0.112(2) Å; whereas a value of ca. 0.05 Å had been obtained previously from film data. Values for the hinge angle (HA = angle between normals to the least-squares planes defined by C1, C2, C3 and C1, C7a, C3a, C3) and fold angle (FA = angle between normals to the least-squares planes defined by C1, C2, C3 and C3a, C4, C5, C7, C7a) are 7.2° and 4.0°, respectively.Key words: indenyl, rhodium, quinones, ring-slippage, ground-state distortion.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Synthesis, Characterization and Thermal Behavior of  HYP2O7·3H2O Electrical Properties of  HYP2O7

2021 ◽  
Author(s):  
Rahma Rahzelli Zrelli ◽  
Fathia Chehimi-Moumen ◽  
Dalila Ben Hassen-Chehimi ◽  
Malika Trabelsi-Ayadi
Keyword(s):  
Infrared Spectroscopy ◽  
Electrical Properties ◽  
Complex Analysis ◽  
Optical Band Gap ◽  
Water Molecules ◽  
X Ray Diffraction ◽  
Soft Chemistry ◽  
Medium Temperature ◽  
X Ray ◽  
Three Stages

Abstract The synthesis of the diphosphate HYP2O7·3H2O was made via soft chemistry route from evaporation of aqueous solution at room temperature. The obtained compound, was characterized by means of X-ray diffraction (XRD) and infrared spectroscopy (IR). The results showed a high purity phase. IR spectrum of this diphosphate revealed usual signals related to P2O7 diphosphate group and water molecules. The thermal decomposition of the synthesized product by DTA / TG proceeded through four stages leading to the formation of the Y2P4O13 as a final product. On the other hand, its decomposition by CRTA took place in three stages leading to the formation of the anhydrous diphosphate HYP2O7 as a final product. X-ray powder diffraction and infrared spectroscopy were used to identify these materials. Furthermore the electrical properties of the HYP2O7 were investigated through impedance complex analysis. Modest conductivity has been observed in this material at relatively medium temperature range. Activation energy of 0.67 and 1.44 eV, was deduced from the corresponding Arrhenius plot.The optical band gap of the title compound is calculated and found to be 2.71 eV.

scholarly journals Production and characterization of iron-chromium-zinc pigment based ceramic stain colour of red-brown shade

2013 ◽  
Vol 48 (3) ◽  
pp. 213-216 ◽  
Author(s):  
S Parveen ◽  
SA Jahan ◽  
S Ahmed
Keyword(s):  
Zinc Oxide ◽  
Iron Oxide ◽  
Chemical Durability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Exposure Limit ◽  
Substitute Material ◽  
Pure Chromium ◽  
Iron Chromium

Considering the demand of ceramic stain colours in Bangladesh, an attempt has been taken to develop iron-chromium-zinc pigment based ceramic stain colour of red-brown shade which could be used as an import substitute material in the local ceramic industries. The desired shade of red-brown stain was synthesized from an equimolar mixture of pure chromium oxide (Cr2O3), iron oxide (Fe2O3) and zinc oxide (ZnO). The developed stain was characterized by X-ray diffraction (XRD) technique. The characteristic of the stain complied with the chemical durability. Moreover, chromium leaching was below the permissible exposure limit which makes it as a promising ceramic stain to be used in our ceramic industries. DOI: http://dx.doi.org/10.3329/bjsir.v48i3.17334 Bangladesh J. Sci. Ind. Res. 48(3), 213-216, 2013

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

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