Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

In this paper presents the computer simulation results on the investigations of the ion scattering processe on the defect InP(001)<110>,<ī10> surface under low-energy grazing ion bombardment have been presented. The peculiarities trajectories of the scattered ions from surface defect, atomic chain and semichannel have been investigated by computer simulation. It was found some trajectories nearby surface atomic chain which have loop shape and a line form. At grazing ion incidence, from a correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the missing atom on the monocrystal surface damaged by the ion bombardment.

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Study of Atomic Steps on the Single Crystal Surface by Grazing Ion Scattering

MRS Proceedings ◽

10.1557/proc-671-o3.17 ◽

2001 ◽

Vol 672 ◽

Author(s):

A.A. Dzhurakhalov

Keyword(s):

Computer Simulation ◽

Single Crystal ◽

Crystal Surface ◽

Grazing Angle ◽

Single Crystal Surface ◽

Medium Energy ◽

Ion Scattering ◽

Energy Distributions ◽

Atomic Steps ◽

Simulation Results

The features of the correlated glancing scattering of medium energy ions by the imperfect surface of a single crystal have been investigated by computer simulation It has been shown that, from the correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the isolated atomic steps on the single crystal surface damaged by the ion bombardment. The presence of atomic steps on the surface lead to increase of the capture probability of channeling ions in the layers under the steps and to increase of probability of their dechanneling. The obtained computer simulation results show that dechanneled ions form characteristic peaks in the angular and energy distributions of scattered particles. Character of ions movement under the step (their ranges, energy losses and dechanneling) is determined both the grazing angle and capture angle under the step.

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Low Energy Ar Ion Bombardment of (001) Si: Defects and Surface Morphology

MRS Proceedings ◽

10.1557/proc-223-21 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 1

Author(s):

M. V. R. Murty ◽

Harry A. Atwater ◽

Thomas J. Watson

Keyword(s):

Molecular Dynamics ◽

Surface Morphology ◽

Surface Defect ◽

Formation Rate ◽

Ion Bombardment ◽

Low Energy ◽

Dynamics Simulation ◽

Defect Structures ◽

Adatom Diffusion ◽

Migration Component

ABSTRACTThe interaction of low energy Ar+ ions with several surface defect structures on (001) Si has been investigated using molecular dynamics simulation. The simulations suggest that ions with energy less than 20 eV selectively displace surface atoms without causing bulk damage, and that the displacement energies for different defect structures is different. The most important effect of ion bombardment on surface morphology is the increased formation rate of single adatoms, which may lead to smoother surfaces by enhanced coarsening at typical epitaxial temperatures. Simulations results also imply that the migration component of adatom diffusion is not significantly enhanced by ion bombardment at typical epitaxial temperatures (600 – 800 K).

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Focused scattering of low energy Li+ from Mo(001): Experimental and computer simulation results

Surface Science ◽

10.1016/0039-6028(83)90573-3 ◽

1983 ◽

Vol 125 (2) ◽

pp. 377-395 ◽

Cited By ~ 20

Author(s):

S.H. Overbury ◽

P.C. Stair ◽

P.A. Agron

Keyword(s):

Computer Simulation ◽

Low Energy ◽

Simulation Results

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INVESTIGATION OF DEFECT INP(001) SURFACE BY THE METHOD OF LOW ENERGY ION SCATTERING

«Узбекский физический журнал» ◽

10.52304/.v21i6.142 ◽

2019 ◽

Vol 21 (6) ◽

pp. 356-361

Author(s):

M. Karimov ◽

U. Kutliev ◽

M. Otaboev

Keyword(s):

Surface Layer ◽

Defect Structure ◽

Binary Collision ◽

Low Energy ◽

Ion Scattering ◽

Energy Distributions ◽

Low Energy Ion Scattering ◽

Energy Part ◽

Grazing Scattering ◽

Collision Approximation

Investigation of grazing scattering of 3 keV Ar+ and Xe+ ions from the defect surface InP(001) are reported. Computer simulations based on the binary collision approximation permit one to carry out a quantitative analysis of data. It is determined that energy distributions of reflected ions directly depend on the defect structure of the topmost surface layer, and these defects form some peaks in low energy part of energy distribution.

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Low-Energy Ne+ Ion Channeling and Implantation into Cu(100) and Cu3Au(100)

MRS Proceedings ◽

10.1557/proc-792-r9.35 ◽

2003 ◽

Vol 792 ◽

Author(s):

Akbarali M. Rasulov ◽

Abdurauf A. Dzhurakhalov

Keyword(s):

Computer Simulation ◽

Elastic Energy ◽

Initial Energy ◽

Low Energy ◽

Energy Losses ◽

Energy Distributions ◽

Ion Channeling ◽

The Impact ◽

Inelastic Energy Losses ◽

Thin Crystal

ABSTRACTBy computer simulation details have been observed regarding the dynamics of the change of the character of trajectories, the range and energy losses of channeled ions, as well as the angular and energy distributions of ions transmitted through thin crystal versus the composition of single crystal, the impact parameters from the center of the channel and the initial energy. It has been established that for a paraxial part of a channeled beam the inelastic energy losses comprise the main loss of energy. The elastic energy losses of the channeling ions in the case of Cu3Au(100) crystal are larger than in the case of Cu(100). As Au atoms are heavier than Cu atoms, in the case of Cu3Au(100) the degree of the dechanneling of particles is greater and the range is smaller in comparison with the similar characteristics for Cu(100).

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