europium sulfide
Recently Published Documents


TOTAL DOCUMENTS

34
(FIVE YEARS 8)

H-INDEX

11
(FIVE YEARS 0)

Author(s):  
Sebastian M. J. Beer ◽  
Arbresha Muriqi ◽  
Patrick Lindner ◽  
Manuela Winter ◽  
Detlef Rogalla ◽  
...  

2021 ◽  
Vol 9 (01) ◽  
pp. 472-478
Author(s):  
Shyamendra Pratap Singh ◽  
◽  
U.C Srivastava ◽  
K.S Upadhyaya ◽  
◽  
...  

In the present communication authors are reportinglattice dynamical study of Europiumsulfide (EuS).Which is based on the two phenomenological models, by including the effect of three-body interactions(TBI) in the frame work of rigid ion model(TRIM) & rigid shell model (TRSM) with the satisfactory description of all phonon properties.The model parameters of both have used to the phonon spectra for the allowed 48-nonequivalent wave vectors in the first Brillouin zone.The frequencies along the symmetry directions have plotted against the wavevector to obtain the phonon dispersion curves(PDC)from both the models. With the help of available experimentaldata.We have also reportedthe Specific heat variation& Combined density of states (CDS) for complete description of the frequencies for the Brillouin zone included theoretical Debye temperature and elastic property of (second-third order) of EuS. So by using the present model the complete lattice property of EuS is reported successfully.


2020 ◽  
Vol 5 (1) ◽  
Author(s):  
Subramanian Mathimalar ◽  
Satyaki Sasmal ◽  
Archit Bhardwaj ◽  
Sekar Abhaya ◽  
Rajasekhar Pothala ◽  
...  

Abstract Proximity of a topological insulator (TI) surface with a magnetic insulator (MI) can open an exchange gap at the Dirac point leading to exploration of surface quantum anomalous Hall effect. An important requirement to observe the above effect is to prevent the topological breakdown of the surface states (SSs) due to various interface coupling effects and to tune the Fermi level at the interface near the Dirac point. In this work, we demonstrate the growth of high-quality c-axis oriented strain-free layered films of TI, Bi2Se3, on amorphous SiO2 substrate in proximity to an MI, europium sulfide (EuS), that show stronger weak anti-localization response from the surface than previous studies with epitaxially interfaced heterostructures. Importantly, we find gate and magnetic field cooling modulated localization effects in the SSs, attributed to the position of interface Fermi level within the band gap that is also corroborated from our positron annihilation spectroscopy measurements. Furthermore, our experiments provide a direct evidence of gate-controlled enhanced interface magnetism in EuS arising from the carrier mediated Ruderman–Kittel–Kasuya–Yosida interactions across the Bi2Se3/EuS interface. These findings demonstrate the existence of complex interfacial phenomena affecting the localization response of the SSs that might be important in proximity engineering of the TI surface to observe surface quantum Hall effects.


2020 ◽  
Vol 62 (9) ◽  
pp. 1619-1623
Author(s):  
P. A. Usachev ◽  
V. N. Katz ◽  
V. V. Pavlov

2020 ◽  
Vol 62 (9) ◽  
pp. 1454
Author(s):  
П.А. Усачёв ◽  
В.Н. Кац ◽  
В.В. Павлов

The photoinduced magnetization in europium sulfide EuS was studied by the magneto-optical Kerr effect. It is experimentally established that when a sample is exposed to light with a photon energy greater than the band gap, photoinduced magnetization arises, associated with the formation of magnetic polarons with a large magnetic moment of about 3000 μB. The polarons are excited in a narrow temperature range of 12-18 K and form a superparamagnetic ensemble with an average polaron lifetime of 13 µs. An experimental setup for measuring photoinduced magnetization with the optical pump-and-probe method is described.


2019 ◽  
Vol 53 (7) ◽  
pp. 872-874
Author(s):  
M. M. Kazanin ◽  
V. V. Kaminski ◽  
M. A. Grevtsev

Author(s):  
М.М. Казанин ◽  
В.В. Каминский ◽  
М.А. Гревцев

AbstractThe field and temperature dependences of the electrical conductivity of europium sulfide are studied in the temperature range 160–430 K. It is found that the electrical conductivity increases in strong electric fields of up to 2 × 10^4 V/cm by the Poole–Frenkel mechanism.


Sign in / Sign up

Export Citation Format

Share Document