Facilitating room-temperature oxygen ion migration via Co-O bond activation in cobaltite films

Oxygen ion migration in strongly correlated oxides can elicit dramatic changes in crystal structure, chemical and magnetoelectric properties, which holds promising for wide applications in catalysis, energy conversion, and electronics....

Assessing Hubbard-corrected AM05+U and PBEsol+U density functionals for strongly correlated oxides CeO2 and Ce2O3

The structure–property relationships of bulk CeO2 and Ce2O3 have been investigated within the DFT+U framework. AM05+U and PBEsol+U reproduce experimental crystalline parameters and properties with superior accuracy compared to conventional Hubbard-corrected exchange–correlation functionals.

Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2Structures

The metal-insulator transition (MIT) in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2) has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D) VO2structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.