Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer

2021 ◽  
Vol 50 (4) ◽  
pp. 2521-2529
Author(s):  
Qingzhi Meng ◽  
Qijing Lin ◽  
Weixuan Jing ◽  
Qi Mao ◽  
Libo Zhao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Double Heterostructure

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Growth and characterization of InAs epitaxial layer onGaAs(111)B

2004 ◽  
Vol 70 (20) ◽  
Author(s):  
H. Wen ◽  
Zh. M. Wang ◽  
J. L. Shultz ◽  
B. L. Liang ◽  
G. J. Salamo
Keyword(s):  
Epitaxial Layer

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

scholarly journals Characterization of the Muscle Electrical Properties in Low Back Pain Patients by Electrical Impedance Myography

PLoS ONE ◽  
2013 ◽  
Vol 8 (4) ◽  
pp. e61639 ◽  
Author(s):  
Congo Tak-Shing Ching ◽  
Yueh-Chi Chen ◽  
Li-Hua Lu ◽  
Peiyuan F. Hsieh ◽  
Chin-Sung Hsiao ◽  
...  
Keyword(s):  
Low Back Pain ◽  
Back Pain ◽  
Electrical Properties ◽  
Electrical Impedance ◽  
Low Back ◽  
Pain Patients

SUPERCONDUCTING PROPERTIES OF BSCCO (2223) ULTRATHIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Structural Characterization ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Thermal Treatments ◽  
Superconducting Properties

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.

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