Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

Author(s):  
Yiyin Zhou ◽  
Yuanhao Miao ◽  
Solomon Ojo ◽  
Grey Abernathy ◽  
Wei Du ◽  
...  
2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.


2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai

1980 ◽  
Vol 27 (11) ◽  
pp. 2198-2198
Author(s):  
H. Ohno ◽  
J. Barnard ◽  
C.E.C. Wood ◽  
L.F. Eastma

1977 ◽  
Vol 13 (8) ◽  
pp. 687-691 ◽  
Author(s):  
M. Campos ◽  
C. Hwang ◽  
R. Bossi ◽  
J. Ripper

2021 ◽  
pp. 149458
Author(s):  
Xiangtai Liu Investigating ◽  
Kai Cheng ◽  
Ruiqi Li ◽  
Yifan Jia ◽  
Qin Lu ◽  
...  

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