scholarly journals Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

2020 ◽  
Vol 111 ◽  
pp. 103460
Author(s):  
N. Dyakonova ◽  
S.A. Karandashev ◽  
M.E. Levinshtein ◽  
B.A. Matveev ◽  
M.A. Remennyi
Keyword(s):  
Cryogenic Temperature ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Double Heterostructure ◽  
Photovoltaic Mode ◽  
Ir Photodiodes

Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

2020 ◽  
Vol 35 (7) ◽  
pp. 075010 ◽  
Author(s):  
N Dyakonova ◽  
S A Karandashev ◽  
M E Levinshtein ◽  
B A Matveev ◽  
M A Remennyi
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Double Heterostructure ◽  
Infrared Photodiodes

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

2015 ◽  
Vol 821-823 ◽  
pp. 559-562
Author(s):  
Eugenia I. Shabunina ◽  
Michael E. Levinshtein ◽  
Natalia M. Shmidt ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Main Part ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Quality ◽  
Noise Density ◽  
First Time

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.

Temperature dependence of conduction and low frequency noise characteristics in GaN Schottky barrier diodes

2020 ◽  
pp. 2150134
Author(s):  
Ya-Yi Chen ◽  
Yuan Liu ◽  
Yuan Ren ◽  
Zhao-Hui Wu ◽  
Li Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Flicker Noise ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Schottky Barrier Diodes ◽  
Low Frequency Noise ◽  
Zero Bias ◽  
Noise Characteristics

In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.

Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes

2019 ◽  
Vol 34 (10) ◽  
pp. 105015 ◽  
Author(s):  
N V Dyakonova ◽  
S A Karandashev ◽  
M E Levinshtein ◽  
B A Matveev ◽  
M A Remennyi
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Double Heterostructure ◽  
Infrared Photodiodes
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