Rancang bangun driver inverter 1000 Watt dengan kendali EGS - 002

Abstrak Penelitian ini dimulai dengan penentuan spesifikasi sistem yang akan dibuat, yaitu sebuah inverter sinusoida pada tegangan output 220Vac pada frekuensi 50 Hz dengan daya sekitar 1000 Watt. Kontrol utama menggunakan EGS-002 sebagai pembangkit sinyal SPWM dan sekaligus driver transistor switching. Sebagai peranti switching adalah 8 buah transistor MOSFET IRF 3205 dengan konfigurasi full-bridge. Sebagai pengubah sinyal SPWM menjadi sinyal sinusoida sekaligus penaik tegangan output digunakan trafo step-up 24V/220V 10A. Hasilnya berupa inverter dengan luaran berupa gelombang sinusoida dengan spesifikasi sebagai berikut: Tegangan masukan 24 VDC. Tegangan luaran 221 VAC dengan bentuk gelombang sinusoida murni pada frekuensi 50 Hz. Daya luaran sampai dengan 905 Watt. Dimensi alat adalah: Panjang 30,5 cm x Lebar 18,5 cm x tinggi 12 cm, dengan berat kurang lebih 3 kg, yang dilengkapi dengan terminal masukan 24Vdc dan 2 buah terminal output 220 Vac (stop kontak). Abstract This research begins with determining the specifications of the system to be made, namely a sinusoidal inverter at an output voltage of 220Vac at a frequency of 50 Hz with a power of about 1000 Watts. The main control uses the EGS-002 as the SPWM signal generator as well as the switching transistor driver. As a switching device are 8 MOSFET transistors IRF 3205 with a full-bridge configuration. To convert the SPWM signal into a sinusoidal signal as well as to increase the output voltage, a 24V / 220V 10A step-up transformer is used. The result is an inverter with a sine wave output with the following specifications: 24 VDC input voltage. Output voltage 221 VAC with pure sinusoidal waveform at a frequency of 50 Hz. Output power up to 905 Watts. The dimensions of the tool are: Length 30.5 cm x Width 18.5 cm x height 12 cm, weighing approximately 3 kg, equipped with a 24Vdc input terminal and 2 220 Vac output terminals (electric socket).

SEPIC Converter with an LC Regenerative Snubber for EV Applications

A Single-Ended Primary-Inductor Converter (SEPIC) converter with an Inductor-Capacitor (LC) regenerative snubber is proposed to reduce Electromagnetic Interference (EMI) for Electric Vehicle (EV) applications. The switching energy is transferred through a capacitor to an inductor which is coupled to SEPIC inductors. This technique reduces the number of components and also returns some of switching energy to SEPIC converter. The mathematical analysis and optimization of LC snubber with respect to number of turns is also presented. Spice simulations and experimental results are provided to verify its performance. The proposed LC regenerative snubber reduces the peak voltage by 16 V on the switching transistor during the switching transient. It is also indicated that 8 dB reduction is achieved in the EMI measurements at ringing frequency and 10 dB reduction at high frequency band.

Rancang bangun inverter 12v-dc ke 220v-ac 500 watt sebagai media praktikum mahasiswa

Penelitian ini bermula dari banyaknya mahasiswa pada program studi teknik Elektronika yang membuat inverter dalam tugas akhir/ skripsi mereka. Berdasarkan informasi dan pengamatan yang ada di tengarai mayoritas alat tidak berhasil dengan baik. Pada penelitian ini dibuat inverter dengan menggunakan 4 macam modul kontrol dan rangkaian switching transistor yang berbeda. Parameter yang di amati adalah bentuk gelombang dan level tegangan sinyal luaran . Hasil yang didapat pada penelitian ini, umumnya modul kontrol inverter yang ada di pasaran menggunakan IC CD-4047-BE dengan hasil luaran berupa gelombang kotak, dan IC ATMEGA 8-16PU dari ATMEL dengan hasil berupa gelombang sinusoida tidak sempurna (75%). Untuk modul kontroller EGS-900 yang menggunakan EGS-002 sebagai kontrol utama memberikan hasil luaran berupa gelombang SPWM dengan masukan berupa tegangan 24V DC, sesudah melewati transformator penaik tegangan hasilnya berupa gelombang sinusoida murni dengan tegangan sekitar 220V dengan frekuensi 50 Hz This research stems from the large number of students in the Electronics engineering study program who make inverters in their final project / thesis. Based on the information and observations available, the majority of the tools did not work properly. In this research, an inverter is made using 4 kinds of control modules and different transistor switching circuits. The parameters observed were the waveform and voltage level from the output signal. The results obtained in this study, generally inverter control modules on the market use IC CD-4047-BE with the output in the form of a square wave, and IC ATMEGA 8-16PU from ATMEL with the result in the form of imperfect sinusoid waves (75%). For the EGS-900 controller module, which uses EGS-002 as the main control, it gives an output in the form of an SPWM wave with an input in the form of 24V DC voltage, after passing through the step-up transformer the result is a pure sine wave with a voltage of about 220V with a frequency of 50 Hz.

Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation

Meniscus, a curvature of droplet surface around solids, takes critical roles in solution-based thin-film processing. Extension of meniscus shape, and eventual uniform film growth, is strictly limited on highly lyophobic surfaces, although such surface should considerably improve switching characteristics. Here, we demonstrate a technique to control the solution meniscus, allowing to manufacture single-crystalline organic semiconductor (OSC) films on the highest lyophobic amorphous perfluoropolymer, Cytop. We used U-shaped metal film pattern produced on the Cytop surface, to initiate OSC film growth and to keep the meniscus extended on the Cytop surface. The growing edge of the OSC film helped maintain the meniscus extension, leading to a successive film growth. This technique facilitates extremely sharp switching transistors with a subthreshold swing of 63 mV dec−1 owing to the effective elimination of charge traps at the semiconductor/dielectric interface. The technique should expand the capability of print production of functional films and devices.

A 2.5-GHz 1-V High Efficiency CMOS Power Amplifier IC with a Dual-Switching Transistor and Third Harmonic Tuning Technique

This paper presents a 2.5-GHz low-voltage, high-efficiency CMOS power amplifier (PA) IC in 0.18-µm CMOS technology. The combination of a dual-switching transistor (DST) and a third harmonic tuning technique is proposed. The DST effectively improves the gain at the saturation power region when the additional gain extension of the secondary switching transistor compensates for the gain compression of the primary one. To achieve high-efficiency performance, the third harmonic tuning circuit is connected in parallel to the output load. Therefore, the flattened drain current and voltage waveforms are generated, which in turn reduce the overlapping and the dc power consumption significantly. In addition, a 0.5-V back-gate voltage is applied to the primary switching transistor to realize the low-voltage operation. At 1 V of supply voltage, the proposed PA has achieved a power added efficiency (PAE) of 34.5% and a saturated output power of 10.1 dBm.