transition metal silicide
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2019 ◽  
Vol 21 (46) ◽  
pp. 25720-25727
Author(s):  
Maxime Godfroy ◽  
Mahmoud Khalil ◽  
Claude Niebel ◽  
Thibaut Jarrosson ◽  
Dominique Foix ◽  
...  

The functionalization by different coupling agents enabled to modify the properties of the surface of CrSi2 nanocrystallites.


2018 ◽  
Vol 913 ◽  
pp. 596-606
Author(s):  
He Wei ◽  
Yin Li Chen ◽  
Lan Su

The transition metal silicide X3Si (X = V, Nb, Cr, Mo and W) was characterized by its low density, high melting point, high temperature hardness, high temperature resistance to wear, high temperature oxidation resistance and corrosion resistance in this paper. For the fields such as aerospace, gas turbine etc, with the application of a new generation of high temperature structural materials, transition metal silicide will be one of their candidate materials. The stability, crystal structure, mechanical properties, electronic properties, Debye temperature and hardness of X3Si(X=V, Nb, Cr, Mo and W) compounds were calculated employing electronic density functional theory (DFT) and the generalized gradient approximation (GGA). The results show that the remaining silicides have stable structures except that W3Si is a metastable structure in X3Si compounds. Based on the stress-strain theory, the bulk modulus, shear modulus, Young's modulus and Poisson's ratio of Cr3Si and Mo3Si were estimated by Voigt-Reuss-Hill method: 248.7 GPa, 158.9 GPa, 393.0 GPa, 0.24 and 249.2 GPa, 134.6 GPa, 342.1 GPa, 0.27. According to the state density (DOS) analysis, we can see that the valence band of X3Si compound is a combination of covalent bond and metal bond. The temperature of Debye of Cr3Si (645.1 K) in X3Si compound is the highest. The hardness of these silicon compounds is evaluated using a semi empirical hardness theory and the result shows that Cr3Si (10.96 GPa) is the hardest compound among them.


2017 ◽  
Vol 225 ◽  
pp. 55-63 ◽  
Author(s):  
Ujwala Ail ◽  
Zia Ullah Khan ◽  
Hjalmar Granberg ◽  
Fredrik Berthold ◽  
Rajasekar Parasuraman ◽  
...  

2015 ◽  
Vol 28 (6) ◽  
pp. 1755-1758 ◽  
Author(s):  
Nannan Han ◽  
Hongsheng Liu ◽  
Jijun Zhao

2014 ◽  
Vol 27 (2) ◽  
pp. 025012 ◽  
Author(s):  
Soshi Ibuka ◽  
Motoharu Imai ◽  
Takashi Naka ◽  
Mitsuaki Nishio

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