Tungsten oxide (WO3) is semiconductor material which can be used for various applications. Especially, one-dimensional (1-D) nanostructured WO3 shows the high photoelectrochemical (PEC) performance due to high surface area and short transport route of electron–hole
pair. The flame vapor deposition (FVD) process is an efficient and economical method for preparation of the 1-D nanos-tructured WO3 thin film. Molybdenum doping is a well-known method to improve the PEC performance of WO3 by reducing band gap and increasing electrical
property. In this study, we prepared the 1-D WO3 nanostructures doped with Mo by FVD single step process. We confirmed that Mo was successfully doped on WO3 without changing significantly the original nanostructure, crystal structure and chemical bonding state of WO3
thin film. As a result of PEC measurement, the pho-tocurrent densities of WO3 thin film with Mo doping were higher by about 1.4 to 2 times (for applied voltage above 0.7 V vs. SCE) than those without Mo doping.
Design heterostructure of NiS-NiS2 on NiFe Layered Double Hydroxide with Mo doping for efficient overall water splitting
