Several Approaches to Bipolar Oxide Diodes with High Rectification
2014 ◽
Vol 93
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pp. 252-259
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We report on advances in the fabrication of high quality bipolar heterodiodes with oxideelectrodes. The highest rectification above 1010 is obtained for a structure from a-ZCO/ZnO/ZnO:Alon Al2O3 (a-ZCO: amorphous ZnCo2O4). Rectification better than 106, a value larger than reportedfor all previous attempts, is obtained for our a-ZCO/a-ZTO (a-ZTO: amorphous zinc tin oxide), a-NiO/ZnO and CuI/ZnO diodes. The ZCO/ZnO has been used as gate in JFETs with ZnO as channel.The bipolar diodes open the field of oxide semiconductor electronics to applications in photovoltaics.
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2008 ◽
Vol 112
(30)
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pp. 11082-11085
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2017 ◽
Vol 9
(24)
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pp. 20656-20663
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2015 ◽
Vol 54
(10)
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pp. 104101
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2021 ◽
Vol 4
(2)
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pp. 1149-1161
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