Room-temperature multiple ligands-tailored SnO2 quantum dots endow in situ dual-interface binding for upscaling efficient perovskite photovoltaics with high VOC

The benchmark tin oxide (SnO2) electron transporting layers (ETLs) have enabled remarkable progress in planar perovskite solar cell (PSCs). However, the energy loss is still a challenge due to the lack of “hidden interface” control. We report a novel ligand-tailored ultrafine SnO2 quantum dots (QDs) via a facile rapid room temperature synthesis. Importantly, the ligand-tailored SnO2 QDs ETL with multi-functional terminal groups in situ refines the buried interfaces with both the perovskite and transparent electrode via enhanced interface binding and perovskite passivation. These novel ETLs induce synergistic effects of physical and chemical interfacial modulation and preferred perovskite crystallization-directing, delivering reduced interface defects, suppressed non-radiative recombination and elongated charge carrier lifetime. Power conversion efficiency (PCE) of 23.02% (0.04 cm2) and 21.6% (0.98 cm2, VOC loss: 0.336 V) have been achieved for the blade-coated PSCs (1.54 eV Eg) with our new ETLs, representing a record for SnO2 based blade-coated PSCs. Moreover, a substantially enhanced PCE (VOC) from 20.4% (1.15 V) to 22.8% (1.24 V, 90 mV higher VOC, 0.04 cm2 device) in the blade-coated 1.61 eV PSCs system, via replacing the benchmark commercial colloidal SnO2 with our new ETLs.

Super-regular femtosecond laser nanolithography based on dual-interface plasmons coupling

Advances in femtosecond laser-material interaction facilitate the extension of maskless optical processing to the high efficiency and deep-subwavelength scale. Here, a hybrid plasmon lithography technique has been demonstrated by irradiating near-infrared femtosecond laser pulses onto the Si material coated with thin Cr films in a vacuum chamber, and superior nanograting structures are found to deeply penetrate through the thin Cr film into the underlying Si substrate. In stark contrast to the common ripple structures formed on the Si surface, the Cr-layer mediated Si nanograting structures not only exhibit the spatially super-regular arrangements with a deep-subwavelength period of 355 nm but also present the nonsinusoidal sharp-edged groove geometry with a large depth-to-width aspect ratio of 2.1. Theoretical analyses and calculations reveal that the anomalous structure characterizations are physically ascribed to the excitation of dual-interface coupled plasmons in the thin metal layer, which possess the squeezed spatial wavelength and the periodic columnar intensity distributions. Moreover, the further deepening of periodic nanostructures into the Si substrate is also elucidated by the simulation of electric field enhancements at the bottom of shallow grooves under irradiation of subsequent laser pulses. In combination with a wet etching process, the Si nanograting structures can be modified into the smooth and narrow-mouthed V-profiles, whose optical measurements show a near omnidirectional antireflection especially in the visible range of 565–750 nm, which is expected for the design of advanced photonic devices.