Thickness-dependent in-plane anisotropy of GaTe phonons

Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm−1. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three Ag modes at 40.2 ($${\text{A}}_{\text{g}}^{1}$$ A g 1 ), 152.5 ($${\text{A}}_{\text{g}}^{7}$$ A g 7 ), and 283.8 ($${\text{A}}_{\text{g}}^{12}$$ A g 12 ) cm−1 exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.

Jones matrix holography with metasurfaces

We propose a new class of computer-generated holograms whose far-fields have designer-specified polarization response. We dub these Jones matrix holograms. We provide a simple procedure for their implementation using form-birefringent metasurfaces. Jones matrix holography generalizes a wide body of past work with a consistent mathematical framework, particularly in the field of metasurfaces, and suggests previously unrealized devices, examples of which are demonstrated here. In particular, we demonstrate holograms whose far-fields implement parallel polarization analysis and custom waveplate-like behavior.

Orientation Identification of the Black Phosphorus with Different Thickness Based on B2g Mode Using a Micro-Raman Spectroscope under a Nonanalyzer Configuration

As an anisotropic material, the unique optoelectronic properties of black phosphorus are obviously anisotropic. Therefore, non-destructive and fast identification of its crystalline orientation is an important condition for its application in optoelectronics research field. Identifying the crystalline orientation of black phosphorus through Ag1 and Ag2 modes under the parallel polarization has high requirements on the Raman system, while in the nonanalyzer configuration, the crystalline orientation of the thick black phosphorus may not be identified through Ag1 and Ag2 modes. This work proposes a new method to identify the crystalline orientation of black phosphorus of different thicknesses. This method is conducted under the nonanalyzer configuration by B2g mode. The results show that B2g mode has a good consistency in the identification of crystalline orientations. In this paper, a theoretical model is established to study the angle-resolved Raman results of B2g mode. The new method can accurately identify the crystalline orientation with different layers of black phosphorus without misidentification.

Nano-Domains Produced through a Two-Step Poling Technique in Lithium Niobate on Insulators

We proposed a two-step poling technique to fabricate nanoscale domains based on the anti-parallel polarization reversal effect in lithium niobate on insulator (LNOI). The anti-parallel polarization reversal is observed when lithium niobate thin film in LNOI is poled by applying a high voltage pulse through the conductive probe tip of atomic force microscope, which generates a donut-shaped domain structure with its domain polarization at the center being anti-parallel to the poling field. The donut-shaped domain is unstable and decays with a time scale of hours. With the two-step poling technique, the polarization of the donut-shaped domain can be reversed entirely, producing a stable dot domain with a size of tens of nanometers. Dot domains with diameter of the order of ∼30 nm were fabricated through the two-step poling technique. The results may be beneficial to domain-based applications such as ferroelectric domain memory.